Transistors: Solid State Electrochemical WO₃ Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016)

In article number 1500414, P. Grey et al. report on the role of electrode architecture, device structure, and tungsten oxide channel thickness in room-temperature sputtered electrochromic transistors. Optimizing these parameters produces devices with improved performance and stability, with an on–off ratio of 5 × 106 and a transconductance (g m) of 3.59 mS, for gate voltages (V G) between −2 and 2 V. Such devices open doors for a wide range of new applications in display technologies, biosensors, fuel cells, and electrochemical logic circuits.