WILEY-V C H VERLAG GMBH
ABSTRACT Amorphous silicon carbide (SiC) is a promising dielectric platform for memristive artificial synapses due to its high stability and back‐end‐of‐line compatibility for CMOS integration. Here, we demonstrate stoichiometric PECVD‐grown amorphous SiC memristors with Cu active electrodes, in which synaptic functionality is engineered through control of material composition.…
ABSTRACT Strain‐induced wavelength‐tunable flexible lasers hold considerable promise in wearable devices and multifunctional electronic skin. Furthermore, their dynamic pulse parameter adjustability with picosecond‐level temporal resolution provides extended potential in high‐precision dynamic monitoring, high‐speed anti‐interference communication, and precision sensing. Here, …
ABSTRACT Organic light‐emitting transistors (OLETs) have great potential in the next‐generation display technology. However, achieving uniform emission remains a challenge. In this study, monolayer molecular crystals (MMCs) of C 5 ‐DNTT were developed as highly efficient bi‐functional active layers for area‐emitting OLETs, providing a mobility of 6.64 cm 2 V −1 s −1…
ABSTRACT Advances in soft electronics and soft biorobotics have accelerated progress in advanced biomedical engineering. This new frontier motivates development of next‐generation healthcare technologies focused on minimally invasive robotic surgery and continuous real‐time physiological monitoring through wearable, implantable, and personalized devices. Among different physiol…
ABSTRACT Zinc oxide (ZnO) nanowires (NWs) are widely investigated for ultraviolet (UV) photodetectors (PDs) due to their wide direct bandgap, high exciton binding energy, and large surface‐to‐volume ratio enabling efficient light–matter interaction and carrier modulation. This review presents a device‐physics‐oriented analysis of recent advances in ZnO NW‐based UV photodetector…
ABSTRACT Indium‐gallium‐zinc‐oxide (IGZO) field‐effect transistors (FETs), owing to their excellent electrical performance and back‐end‐of‐line (BEOL) compatibility, are promising candidates for logic applications. Although various techniques have been extensively investigated to enhance IGZO FET performance, these approaches typically fall short in offering precise and scalabl…
ABSTRACT Because of features such as high speed, scalability, low programming voltage, and low power consumption, RRAM (Resistive Random Access Memory) is a leading candidate for next‐generation non‐volatile memories. Among the diverse array of active materials investigated for RRAM devices, two‐dimensional (2D) halide perovskites have garnered considerable interest due to thei…
ABSTRACT Polymer nanocomposites are widely explored to enhance the electrocaloric effect (ECE) through various interfacial modulation. While many prior works focused on all‐solid nanocomposites, in which the both matrix and fillers are solid‐state materials, the role of interfacial mechanical modulus in regulating local dipolar responses and macroscopic entropy changes remains …
ABSTRACT Artificial intelligence (AI) has emerged as a fruitful tool in materials science, enabling accelerated discovery, characterization, and optimization of functional materials. Among ferroelectrics, fluorite‐doped hafnium oxide attracts exceptional attention due to its CMOS compatibility, scalability, and robust ferroelectricity at a few nanometers in thickness. However, …
ABSTRACT Permanent magnets with strong anisotropy and high coercivity underpin modern information and energy technologies, yet rare‐earth‐free alternatives remain limited. Here, we show that thickness engineering via mechanical exfoliation induces hard magnetic behavior in the van der Waals ferromagnet Fe 3 GaTe 2 . Bulk crystals exhibit Curie temperatures above 350 K but…
ABSTRACT Chiral conducting polymers have gained considerable attention as specific environments for enantioselective recognition, separation and synthesis. In this work, we report the rational design of a specific class of conducting polymers with chiral features for the enantiodiscrimination of amino acids. This is achieved by introducing chiral features on the trimer unit bis…
ABSTRACT Gallium oxide (Ga 2 O 3 ) is an ultra‐wide‐bandgap semiconductor with an intrinsic absorption edge in the solar‐blind region, making it attractive for deep‐ultraviolet photodetectors. However, solution‐processed Ga 2 O 3 photodetectors typically exhibit limited photoresponse, which hinders their practical application. Therefore, developing effective post‐an…
ABSTRACT Metal halide perovskites (MHPs) have attracted considerable attention due to their exceptional performance as soluble and crystalline semiconductors. Although they are predominantly explored in the context of photovoltaics, their composition‐dependent bandgap also enables their application in light‐emitting diodes, photo‐, and x‐ray detectors. A key advantage of MHPs l…
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ABSTRACT Developing electrically contacted architectures for molecular data storage remains a central challenge in molecular electronics. Here, we integrate redox‐active polyoxovanadate clusters – [V 6 O 13 ((OCH 2 ) 3 CCH 2 OH) 2 ] 2– charge‐balanced by n Bu 4 N + ( TBA‐V 6 OH ) – into a solvent‐processable poly(methyl methacrylate) (PMMA) matrix …
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ABSTRACT Depolarization effects in ‐based ferroelectric devices have gained significant interest for research on non‐volatile memory applications. Understanding retention mechanisms enables device optimization for temporal and brain‐inspired computing in hardware. This work presents a ferroelectric capacitor stack that shows a metastable state that relaxes on a millisecond scal…
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ABSTRACT Lead‐free double perovskite Cs 2 AgBiBr 6 single crystals offer a promising solution for integrated visible light and x‐ray detection. However, traditional crystal growth methods are often time‐consuming and complex, limiting commercial viability. In this study, we introduce a controlled‐cooling technique that enables rapid synthesis of high‐quality Cs 2 AgBiB…
ABSTRACT Threshold switching devices have attracted significant interest for true random number generator (TRNG) applications due to their high speed and intrinsic nonlinearity, yet practical implementations often suffer from either limited speed or insufficient randomness. Here, we propose a hybrid TRNG that synergistically couples a fast NbO 2 insulator‐metal transition (o…