Fluorinated Graphene Contacts and Passivation Layer for MoS₂ Field Effect Transistors (Adv. Electron. Mater. 10/2022)

MoS2 Field Effect Transistors In article number 2101370, Jangyup Son, Gwan-Hyoung Lee, and co-workers suggest a facile one-step technique utilizing fluorinated graphene as the passivation and contact buffer layer to MoS2, leading to the formation of Ohmic contacts and high carrier mobility of up to 64 cm2 V−1 s−1. The work provides a strategy for high-performance 2D semiconductor electronics.