DataVXAdvanced Electronic MaterialsPaper
journal article·2023-03Open access

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

Min Guo, Hai Ou, Dongyu Xie, Qiaoji Zhu, Mengye Wang, Lingyan Liang, Fengjuan Liu, Ce Ning, Hongtao Cao, Guangcai Yuan, Xubing Lu, Chuan Liu

Advanced Electronic Materials· Volume 9· Issue 3
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Source abstract

Abstract

Abstract High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high saturation mobility of 47.9 cm2 V−1 s−1. The reliability of the mobility values is critically validated and assessed by four‐probe measurements, the transfer‐length method, and the temperature‐dependence. X‐ray photoelectron spectra are combined with C–V measurements to characterize the interface, and the results show that a two‐dimensional electron gas (2DEG)‐like state accumulates at the In2O3/IGZO interface. However, this state only forms in the subthreshold region and does not cause the high carrier mobility in the region above the threshold. Instead, the enhanced carrier mobility results from the intrinsic high mobility of the In2O3, the smooth surface, and the low‐defect states in the In2O3/IGZO bilayer with a good percolation transport path.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Transition Metal Oxide Nanomaterials

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Affiliations

State Key Laboratory of Optoelectronic Materials and Technologies Guangdong Province Key Laboratory of Display Material and Technology School of Electronics and Information Technology Sun Yat‐sen University Guangzhou 510275 China

State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Sun Yat‐sen University Guangzhou 510275 China

Laboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

BOE Technology Group Co., Ltd Beijing 100176 China

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China

Funding

National Natural Science Foundation of China

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