journal article·2024-11Open access

Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024)

Wangmyung Choi, Seungme Kang, Yeong Jae Kim, Youngwoo Yoo, Wonjun Shin, Yeongkwon Kim, Young‐Joon Kim, Byung Chul Jang, Jaehyun Hur, Hocheon Yoo

Advanced Electronic Materials· Volume 10· Issue 11

Abstract

Robust Light Detection with Broadband ZnGa2O4/p-Si Heterojunction Photodiode for Physically Unclonable Functions In article number 2400649, Hocheon Yoo and co-workers demonstrate broadband detection performance by applying a UV-responsive ZnGa2O4 film with a low refractive index on p-Si. The device exhibited stability in various environments, benefiting from the chemical robustness of ZnGa2O4. By introducing different self-assembled monolayers to induce irregular doping, the research team enabled multi-key generation through a combination of voltage and wavelength.
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Research context

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Physical Unclonable Functions (PUFs) and Hardware Security · Industrial Vision Systems and Defect Detection

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Affiliations

Department of Semiconductor Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of Korea

Ceramic Total Solution Center Korea Institute of Ceramic Engineering and Technology 3321 Gyeongchung‐daero Icheon 17303 Republic of Korea

Department of Semiconductor Convergence Engineering Sungkyunkwan University 2066, Seobu‐ro, Jangan‐gu Suwon 16 419 Republic of Korea

School of Electronics and Electrical Engineering Kyungpook National University 80 Daehakro, Bukgu Daegu 41566 Republic of Korea

Department of Electronic Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of Korea

Department of Chemical and Biological Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of Korea

References

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