Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Abstract Traditional von Neumann architecture is facing severe challenges due to separated physical structure of memory and processing units, which inspires the development of in‐memory computing electronics. Intriguingly, as a kind of complementary metal‐oxide‐semiconducor compatible ferroelectric material, HfO₂ is widely studied based on first‐principles calculation in the semiconductor field, showing great potential in constructing emerging electronics. Different structures including ferroelectric diode, ferroelectric field effect transistor, and ferroelectric tunnel junctions based on HfO₂ are proposed for in‐memory computing application. Here, this work reviews the progress of HfO₂ from materials to devices, including crystal structure, fatigue mechanism, first‐principles calculation, and neuromorphic computing application of HfO₂‐based device. This work can provide a reference for the HfO₂ ferroelectric device development for next‐generation in‐memory computing applications.