journal article·2023-07Open access

Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films

Eunsoo Cho, Konstantin Klyukin, Tingyu Su, Allison Kaczmarek, Caroline A. Ross

Advanced Electronic Materials· Volume 9· Issue 7

Abstract

Abstract This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO3 orthoferrite thin films with different Lu/Fe ratios. LuFeO3 thin films are grown by pulsed laser deposition on SrTiO3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO3 is antiferromagnetic with a weak canted moment perpendicular to the film plane. Piezoresponse force microscopy imaging and switching spectroscopy reveal room temperature ferroelectricity in Lu‐rich and Fe‐rich films, whereas the stoichiometric film shows little polarization. Ferroelectricity in Lu‐rich films is present for a range of deposition conditions and crystallographic orientations. Positive‐up‐negative‐down ferroelectric measurements on a Lu‐rich film yield ≈13 µC cm−2 of switchable polarization, although the film also shows electrical leakage. The ferroelectric response is attributed to antisite defects analogous to that of Y‐rich YFeO3, yielding multiferroicity via defect engineering in a rare earth orthoferrite.
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Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

Department of Materials Engineering Auburn University Auburn AL 36849 USA

Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

Funding

U.S. Department of Defense · National Science Foundation

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