Low-cost circuit solutions for micro- and millimeter-wave systems using commercially available SiGe technologies

Abstract Increased use of wireless technologies for communications and sensing results in spectral overcrowding in the lower GHz range. Spectrum allocations in the upper microwave and in the millimeter-wave ranges are available, yet realizing low-cost circuits, e.g. for the 24 GHz ISM band remains a challenge. We are investigating the use of two Si/SiGe hetero-junction bipolar transistor technologies at Atmel Germany (the commercially available SiGe1 and the emerging SiGe2 processes), combined with compact circuit design and back-end micromachining techniques, for the realization of cost-efficient RF frontend solutions at frequencies above 20 GHz. Results presented here include a fully monolithic receiver IC for 24 GHz, and a 33 GHz oscillator module combined with a thin-film antenna structure using wafer-level integration.