O2+ versus Cs+ for high depth resolution depth profiling of III–V nitride-based semiconductor devices

Abstract Optimum depth resolution with adequate sensitivity for the elements of interest is required to obtain the information desired from SIMS analysis of multilayer nitride III–V structures. For many of the species of interest, particularly the p-type dopants, O2+ bombardment at low energy is often used. Use of Cs+ bombardment and detection of the cesium attachment secondary ions (CsM+ where M is the element of interest) may provide several advantages over O2+ analysis. Using similar low primary ion impact energy analysis conditions for O2+ and Cs+ on CAMECA IMS-6f and IMS-4f instruments, the depth resolution obtained for positive secondary ions is compared.