Laser doping in Si, InP and GaAs

Abstract Experimental results on laser solid-phase doping of Si, GaAs and InP are presented. Using 1 kW CO2 laser, we fabricated ultra-shallow p–n junctions and Ohmic contacts with these semiconductors. The impurity distribution into the depth of the doped layers has been studied through the Auger electron spectroscopy (AES). The zero-bias resistance of formed GaAs p–n junctions was ∼1010 Ω and a typical resistance of nonrectifying contacts with GaAs and InP was 5·10−7 Ω·cm2 and 5·10−5 Ω·cm2, respectively.