Preparation of p-type semiconductor perovskite La1–Sr CoO3 films and their p–n heterostructure devices
Source abstract
Abstract
Abstract Semiconductor La0.67Sr0.33CoO3 thin films has been investigated as function of oxygen atmosphere during film growth in pulsed laser deposition. While amount of oxygen greatly depends on an oxygen atmosphere during film growth, in condition of oxygen atmosphere from 4 Pa to 100 Pa, the carrier in La0.67Sr0.33CoO3 thin films were found to be positive, exhibiting p-type conduction. Furthermore, we prepared (p)-La0.67Sr0.33CoO3/(i)-CeO2/(n)-InGaZnOx heterostructure devices and investigated electrical properties. These results showed rectifying behavior was clearly observed in heterostructure at room temperature. The sharp increase of current with voltage, when voltage exceeds diffusion potential, indicates the conductive resistance was small. p-type semiconductor La0.67Sr0.33CoO3 thin films and their p–n heterostructure devices with rectifying behavior may aid in the development of various semiconductor devices such as three terminal transistors, light emitted diode (LED) and solar cell.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
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1. High-temperature heat contents of the metatitanates of calcium iron and magnesium10.1021/ja01210a030 ↗
2. Crystal structure of barium titanate10.1038/155484b0 ↗
3. Possible high Tc superconductivity in the Ba-La-Cu-O system10.1007/BF01303701 ↗
4. Current switching of resistive states in magnetoresistive manganites10.1038/40363 ↗
5. Direct evidence for a half-metallic ferromagnet10.1038/33883 ↗
6. Multiferroic and magnetoelectric materials10.1038/nature05023 ↗
7. Estimation of trap levels in SrTiO3 epitaxial films from measurement of (LaSr)MnO3/SrTiO3/(LaSr)TiO3 p-i-n diode characteristics10.1063/1.1334638 ↗
8. First demonstration of rectifying property of P-I-N heterojunctions fabricated by tri-layered semiconducting oxides10.1143/JJAP.38.2675 ↗
9. Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO310.1063/1.4952609 ↗
10. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique10.1016/j.apsusc.2016.01.104 ↗
11. Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films10.1016/j.tsf.2010.04.063 ↗
12. Thermoelectric properties of polycrystalline La1-xSrxCoO310.1016/j.jssc.2008.08.017 ↗
13. Electronic structure defect chemistry, and transport properties of SrTi1-xFexO3-y solid solutions10.1021/cm052803x ↗
14. In-doped SrTiO3 ceramic thin films10.1063/1.1478148 ↗
15. Perovskite LaRhO3 as a p-type active layer in oxide photovoltaics10.1063/1.4909512 ↗
16. Magnetic and electric properties of La1-xMxRhO3 (M=Ca, Sr, and Ba): hole doping in 4dε orbitals of Rh3+ with low spin configuration10.1006/jssc.1993.1131 ↗
17. Structural and Thermal Properties of La1-xSrxCoO3-δ10.1021/cm061539k ↗
18. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films10.1063/1.1788897 ↗
19. Buffer layer-induced unusual rectifying behavior in La0.67Ca0.33MnO3/LaMnO3/SrTiO3:Nb junctions10.1063/1.3122343 ↗
20. Hysteretic current–voltage characteristics of all-oxide (LaSr)MnO3/BaTiO3/(LaSr)TiO3 pin-diode10.1143/JJAP.40.L518 ↗