Variation of poly-Si grain structures under thermal annealing and its effect on the performance of TiN/Al2O3/Si3N4/SiO2/poly-Si capacitors
Source abstract
Abstract
Abstract This study presents the improved memory properties of TiN/Al2O3/Si3N4/SiO2/poly-Si (TANOS) capacitors after rapid thermal annealing (RTA) and high-pressure annealing processes (HPAP) using H2 and D2 molecules. First, it was confirmed that the recrystallization rate, and thus the grain size of the poly-silicon (poly-Si) film, increased with an increase of the RTA temperature, eventually improving the performance of the TANOS capacitor by reducing the trap densities at the poly-Si/SiO2 interface. Then, it was found that device performance parameters, such as program/erase speed and data retention, could be further improved through HPAP owing to the passivation of band gap states at the poly-Si channel grain boundary. Finally, it was confirmed that these improvements can be observed at a transistor level in the same fashion using the Silvaco TCAD simulation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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