Ambipolar organic transistors with high on/off ratio by introducing a modified layer of gate insulator
Source abstract
Abstract
Abstract Oxotitanium phthalocyanine (TiOPc)-based organic thin-film transistors (OTFTs) were fabricated by introducing para -sexiphenyl ( p -6P) thin-film as the modified layer of gate insulator. The typical ambipolar transport behavior may be observed in ambient, which exhibited a balanced charge transport with a hole mobility of 8 × 10 −2 and an electron mobility of 3 × 10 −2 cm 2 /V.s. More importantly, the on/off ratio for both n - and p -type accumulation-mode has reached 10 4 and simultaneously exhibited good air-stability. Furthermore, capacitance-voltage characteristics were presented in order to further clarify the operation procedures of two kinds of charge-carriers. The excellent ambipolar transport behavior is attributed to the surface modification properties of p -6P for better electron transport and highly ordered thin-film morphology of TiOPc. These results demonstrate that the surface characteristics of insulator play a crucial role in realizing ambipolar devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
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