A correlation of TOF-SIMS and TXRF for the analysis of trace metal contamination on silicon and gallium arsenide
Source abstract
Abstract
Both time-of-flight secondary ion mass spectrometry (TOF-SIMS) and total reflection X-ray fluorescence spectroscopy (TXRF) are widely used tools in the semiconductor industry. They are variously used to support R&D, product development, production, quality control and failure analysis. With increasing demands for cleanliness and contamination control in both the semiconductor and compound semiconductor industries, enhanced sensitivity and capabilities are required from existing analytical techniques. This paper will detail the cross correlation of TOF-SIMS and TXRF for the analysis of trace elemental contaminants on both Si and GaAs wafers. Close agreement will be demonstrated between both techniques. Additionally, the quantitative mapping of Cu and Zn on GaAs using TOF-SIMS will be demonstrated.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques
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References (3)
Show source-provided references
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