journal article·1987-10

Low defect-density polycrystalline silicon for high performance thin film transistors

D.B. Meakin, N.A. Economou, P.A. Coxon, J. Stoemenos, A. Lowe, P. Migliorato

Applied Surface Science· Volume 30· Issue 1-4
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (11)

Show source-provided references
1. Morozumi · SID '84 Digest · 1984 · 316
2. Oana · Japan. J. Appl. Phys. · 1983 · 22 · 49310.7567/JJAPS.22S1.493 ↗
3. Sugahara · IEEE Electron Device Letters EDL-7 · 1986 · 19310.1109/EDL.1986.26341 ↗
4. Malhi · IEEE Trans. Electron Devices ED-32 · 1985 · 25810.1109/T-ED.1985.21939 ↗
5. Onga · Japan. J. Appl. Phys. · 1982 · 21 · 147210.1143/JJAP.21.1472 ↗
6. Fortunato · 1986 · 41
7. Bisaro · J. Appl. Phys. · 1986 · 59 · 116710.1063/1.336554 ↗
8. Harbeke · J. Electrochem. Soc. · 1984 · 131 · 67510.1149/1.2115672 ↗
9. Fossum · IEEE Trans. Electron Devices ED-32 · 1985 · 187810.1109/T-ED.1985.22212 ↗
10. Kamins · IEEE Electron Device Letters EDL-1 · 1980 · 15910.1109/EDL.1980.25272 ↗
11. Migliorato · Appl. Surface Sci. · 1987 · 30 · 35310.1016/0169-4332(87)90113-9 ↗