journal article·2020-04Open access

MoS2 impurities: Chemical identification and spatial resolution of bismuth impurities in geological material

Maria Gabriela Sales, Lucas Herweyer, Elizabeth Opila, Stephen McDonnell

Abstract

Molybdenum disulfide (MoS2) is the most widely studied transition metal dichalcogenide (TMDC) material, in part because it is a natural crystal present in the earth, thus making it abundant and easily accessible. Geological MoS2 has been used in various studies that look at incorporating MoS2 into devices for nanoelectronics and optoelectronics. However, variations in the electronic properties of a single MoS2 surface are known to exist due to defects that are intrinsic to natural MoS2. This work reports the presence of bismuth impurities in MoS2 with concentrations high enough to be detected by X-ray photoelectron spectroscopy (XPS). These concentrations are further corroborated with inductively coupled plasma optical emission spectroscopy (ICP-OES). Localization of these bismuth clusters is shown using XPS-mapping, and the cluster size is determined to be on the order of tens of microns. This work provides important insights into the nature of impurities that are known to exist in MoS2.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (41)

Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. MoS2 transistors fabricated via plasma-assisted nanoprinting of few-layer MoS2 flakes into large-area arrays10.1021/nn401093u ↗
3. Ambipolar MoS2 thin flake transistors10.1021/nl2021575 ↗
4. High performance multilayer MoS2 transistors with scandium contacts10.1021/nl303583v ↗
5. Few-layer MoS2 flakes as active buffer layer for stable perovskite solar cells10.1002/aenm.201600920 ↗
6. Nonvolatile memory cells based on MoS2/graphene heterostructures10.1021/nn3059136 ↗
7. Monolayer MoS2 heterojunction solar cells10.1021/nn502776h ↗
8. Exfoliated MoS2 nanocomposite as an anode material for lithium ion batteries10.1021/cm101254j ↗
9. Chemically exfoliated MoS2 as near-infrared photothermal agents10.1002/anie.201209229 ↗
10. MoS2 field-effect transistor for next-generation label-free biosensors10.1021/nn5009148 ↗
11. Enhanced hydrogen evolution catalysis from chemically exfoliated metallic MoS2 nanosheets10.1021/ja404523s ↗
12. Synergetic effect of MoS2 and graphene as cocatalysts for enhanced photocatalytic H2 production activity of TiO2 nanoparticles10.1021/ja302846n ↗
13. Dissociation of H2O at the vacancies of single-layer MoS210.1103/PhysRevB.85.195410 ↗
14. Defect-dominated doping and contact resistance in MoS210.1021/nn500044q ↗
15. Ring structures on natural molybdenum disulfide investigated by scanning tunneling and scanning force microscopy
16. Scanning tunneling microscopy investigation of the surface structures of natural MoS210.1016/0039-6028(94)90541-X ↗
17. Surface defects on natural MoS210.1021/acsami.5b01778 ↗
18. Impurities and electronic property variations of natural MoS2 crystal surfaces10.1021/acsnano.5b03309 ↗
19. Vickerman · 2009
20. Graphene Supermarket, in, 2009.
21. Home | SPI Supplies, in, 2019.
22. Kolibrik.net, s.r.o. – Custom develompent of electronics and software, in, 2017.
23. Doping against the native propensity of MoS2: degenerate hole doping by cation substitution10.1021/nl503251h ↗
24. Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing10.1038/s41699-019-0095-5 ↗
25. Reduced graphene oxide–bismuth oxide composite as electrode material for supercapacitors10.1007/s11581-014-1182-4 ↗
26. Bismuth oxide: a versatile high-capacity electrode material for rechargeable aqueous metal-ion batteries10.1039/C6EE01871H ↗
27. The numerical modeling of the composition and state of aggregation of the condensed medium formed in heating the Bi2O3 oxide in argon10.1134/S0036024406120028 ↗
28. Shape-controlled Bi2S3 nanocrystals and their plasma polymerization into flexible films10.1002/adma.200600460 ↗
29. Synthesis and material properties of Bi2Se3 nanostructures deposited by SILAR10.1021/acs.jpcc.8b01692 ↗
30. Microscopic structure of the SiO2/Si interface10.1103/PhysRevB.38.6084 ↗
31. A. Jablonski, NIST electron effective-attenuation-length database, (2011).
32. Single-layer MoS2 transistors10.1038/nnano.2010.279 ↗
33. The work function of the elements and its periodicity10.1063/1.323539 ↗
34. A.T. Neal, H. Liu, J.J. Gu, P.D. Ye, Metal contacts to MoS2: a two-dimensional semiconductor, in: 70th Device Research Conference, 2012, pp. 65–66.10.1109/DRC.2012.6256928 ↗
35. Channel length scaling of MoS2 MOSFETs10.1021/nn303513c ↗
36. Integrated circuits based on bilayer MoS2 transistors10.1021/nl302015v ↗
37. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS210.1021/nl401916s ↗
38. Single-layer MoS2 phototransistors10.1021/nn2024557 ↗
39. Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature10.1002/smll.201101016 ↗
40. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals10.1038/ncomms2018 ↗
41. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions10.1038/srep01634 ↗