Back-to-back Interface diodes induced symmetrical negative differential resistance and reversible bipolar resistive switching in β-CuSCN trigonal pyramid micro/nanoarray

Abstract As a superior p-type wide bandgap semiconductor, β-CuSCN has a huge potential in optoelectronic device application, and however its conduction could intensively be affected by externally applied bias. Here, we demonstrate electrodeposited individual β-CuSCN trigonal micro/nanopyramids and their array films can show Cu+ trap-controlled bias dependence of electron transport. Before being subjected to a large reverse bias or a unidirectional bias, their cyclic I V curves are coincident resulted from bulk-trap related carrier hopping. At relatively large bidirectional operation bias, they can symmetrically present two large hysteresis loops with negative differential resistance (NDR), and meanwhile accompany with nonvolatile negative resistive switching (RS) feature. After being applied respectively a relatively large fixed bias in two opposite directions, more importantly, switchable classic asymmetrical bipolar RS can successfully be realized at a relatively low operation bias. The switchable formation of reversion and depletion layer, resulted from the minority carriers (electrons) injection into the traps of surface connected with negative electrode, plays a crucial role. Under relatively large bias, the synergistic effect of two surface trap-related back-to-back connected bipolar RS devices results in symmetrical negative RS with NDR. After being applied a relatively large fixed bias, the bipolar RS effect can be enhanced at the surface connected with negative electrode due to the presence of electron injection induced high and narrow barrier, and conversely it disappears at the surface connected with positive electrode due to hole injection-induced ohmic contact. Then, the devices can be set and reset by the filling and emptying of holes in the thin reversion and depletion layer at low reverse and forward voltages, respectively, showing switchable bipolar RS behavior. Due to superior stability, reversibility, nondestructive readout, and low operation bias as well as remarkable cycle performance, the bias-governed conduction with negative RS and switchable bipolar RS makes it a potential candidate in next-generation erasable nonvolatile RRAM devices.