Preparation of ZnO films with variable electric field-assisted atomic layer deposition technique

Abstract The ZnO films have been prepared by a variable electric field-assisted atomic layer deposition method (ALD). By applying electric fields during the precursor pulses, we can modulate both the crystal orientation and structure of the obtained ZnO films. The ZnO films with c-axis preferred orientation and the least oxygen vacancy defect were obtained when the holder electric polarities were positive and negative during the DEZn and H2O pulse, respectively. It is supported that when electric field was applied in the chamber, the torque may lead to the precursor molecular alignments along the electric field direction, which could affect the film growth process and then influence their structures and properties. This variable electric field-assisted ALD approach would provide an efficient protocol for the growth of semiconductor films with designed properties.