Ion beam analysis of Cu(In,Ga)Se 2 thin film solar cells
Source abstract
Abstract
Abstract The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se 2 thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · X-ray Spectroscopy and Fluorescence Analysis · Electron and X-Ray Spectroscopy Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. Compositional investigation of potassium doped Cu(In,Ga)Se2 solar cells with efficiencies up to 20.8%10.1002/pssr.201409040 ↗
2. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells10.1038/nmat3789 ↗
3. Solar cell efficiency tables (version 45): solar cell efficiency tables10.1002/pip.2573 ↗
4. Investigation of Cu(In,Ga)Se2 thin-film formation during the multi-stage co-evaporation process10.1002/pip.1233 ↗
5. Characterization of Cu(In,Ga)Se2 – based thin film solar cells on polymide10.1016/j.tsf.2008.10.132 ↗
6. Transfer of Cu(In,Ga)Se2 solar cells to flexible substrates using an in situ process control10.1016/j.tsf.2004.11.067 ↗
7. Progress in polycrystalline thin-film Cu(In,Ga)Se2 solar cells10.1155/2010/468147 ↗
8. Development of thin-film Cu(In,Ga)Se2 and CdTe solar cells10.1002/pip.527 ↗
9. Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se2 films deposited by sputtering with a Cu–In–Ga, Cu–In–Ga2Se3, or Cu–Ga–In2Se3 target and a subsequent selenization procedure at 550–700°C10.1016/j.apsusc.2012.11.131 ↗
10. Development of gallium gradients in three stage Cu(In,Ga)Se2 co-evaporation process10.1002/pip.1134 ↗
11. Gallium gradients in chalcopyrite thin films: depth profile analyses of films grown at different temperatures10.1063/1.3656986 ↗
12. Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films10.1017/S1431927611000523 ↗
13. Grazing-incidence X-ray fluorescence analysis for non-destructive determination of In and Ga depth profiles in Cu(In,Ga)Se2 absorber films10.1063/1.4821267 ↗
14. Development and application of glancing incident X-ray fluorescence spectrometry using parallel polycapillary X-ray lens10.1016/j.apsusc.2008.09.079 ↗
15. Ion beam analysis: a century of exploiting the electronic and nuclear structure of the atom for materials characterization10.1142/S1793626811000483 ↗
16. Investigations of atomic diffusion at CIGSSe/ZnSe interfaces with heavy ion elastic recoil detection analysis (HI-ERDA)10.1016/S0040-6090(01)01540-1 ↗
17. Study of In diffusion into ZnSe buffer-layer material of chalcopyrite solar cells with rough surfaces by means of ERDA measurements10.1016/S0168-583X(01)01009-6 ↗
18. Comparative depth-profiling analysis of nanometer-metal multilayers by ion-probing techniques10.1016/j.trac.2009.01.004 ↗
19. Elemental depth profiling in Cu(In,Ga)Se2 solar cells using micro-PIXE on a bevelled section10.1016/j.nimb.2005.01.097 ↗
20. In-depth elemental characterization of Cu(In,Ga)Se2 thin film solar cells, by means of RBS and PIXE techniques10.1016/j.nimb.2014.01.025 ↗
21. Advanced physics and algorithms in the IBA DataFurnace10.1016/j.nimb.2007.10.044 ↗
22. IBANDL – http://www-nds.iaea.org/exfor/ibandl.htm.
23. Reference-free depth-dependent characterization of nanolayers and gradient systems with advanced grazing incidence X-ray fluorescence analysis10.1002/pssa.201400204 ↗
24. A quarter-century of metrology using synchrotron radiation by PTB in Berlin10.1002/pssb.200945162 ↗
25. Reference-free X-ray spectrometry based on metrology using synchrotron radiation10.1039/b718355k ↗
26. Reference-free total reflection X-ray fluorescence analysis of semiconductor surfaces with synchrotron radiation10.1021/ac071236p ↗
27. Polynomial approximation to universal ionisation cross-sections of K and L shells induced by H and He ion beams10.1002/xrs.1305 ↗
28. Rutherford backscattering analysis of thin films and superlattices with roughness10.1088/0022-3727/34/14/305 ↗
29. Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering10.1016/j.nimb.2003.11.009 ↗
30. SRIM – the stopping and range of ions in matter (2010)10.1016/j.nimb.2010.02.091 ↗
31. Band-gap engineering in Cu(In,Ga)Se-2 thin films grown from (In,Ga)(2)Se-3 precursors10.1016/0927-0248(95)00122-0 ↗
32. Holistic RBS-PIXE data reanalysis of SBT thin film samples10.1016/j.nimb.2007.04.284 ↗