Influence of tantalum on mechanical, ferroelectric and dielectric properties of Bi-excess Bi3.25La0.75Ti3O12 thin film
Source abstract
Abstract
Abstract The Bi-excess Bi3.25La0.75Ti3O12 (BLT) and Bi3.25La0.75Ti2.91Ta0.09O12 (BLTT) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si substrates using rf-magnetron sputtering method. The effect of tantalum on mechanical, ferroelectric and dielectric properties of BLT thin films was investigated. XRD patterns reveal that BLT and BLTT thin films have a same second crystalline phase Bi12TiO20, but the former has a randomly oriented major Bi4Ti3O12 phase while the major phase in the later is preferentially oriented along 〈1 1 7〉 direction. XPS analysis shows that the substitution of Ta5+ has a significant influence on Ti3+ defects. Mechanical response of thin films is discussed in the light of nano indentation analysis which shows that both the hardness and modulus are reduced with the addition of Ta5+. Ferroelectric properties were improved significantly by Ta5+ doping due to the reduction of Ti3+ defects, and an enhanced remnant polarization (2Pr) of 32.5 μC/cm2 and a decreased coercive field (2Ec) of 260 kV/cm were obtained. In addition, the Ta substitution elevated the dielectric constant and slightly raised the Curie temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (52)
Show source-provided references
1. Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics10.1088/0034-4885/61/9/002 ↗
2. Applications of modern ferroelectrics10.1126/science.1129564 ↗
3. Ferroelectric thin films: review of materials, properties, and applications10.1063/1.2336999 ↗
4. Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition10.1016/j.apsusc.2008.11.011 ↗
5. Ferroelectric memories10.1126/science.246.4936.1400 ↗
6. Recent advances in multiferroic thin films and composites10.1016/j.jallcom.2012.05.125 ↗
7. Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates10.1063/1.124771 ↗
8. Photoinduced changes in the fatigue behavior of SrBi2Ta2O9 and Pb(Zr, Ti)O3 thin films10.1063/1.362968 ↗
9. Layered perovskites with giant spontaneous polarizations for nonvolatile memories10.1103/PhysRevLett.89.087601 ↗
10. Lanthanum-substituted bismuth titanate for use in non-volatile memories10.1038/44352 ↗
11. Effect of isovalent lanthanide cations compensation for volatilized A-site bismuth in Aurivillius ferroelectric bismuth titanate
12. Lead-free Bi5-xLaxTi3FeO15 (x = 0,1) nanofibers toward wool keratin-based biocompatible piezoelectric nanogenerators10.1039/C6TC01828A ↗
13. Crystal and electronic structures of Bi4−xLaxTi3O12 ferroelectric materials10.1063/1.1410877 ↗
14. Ferroelectric properties of La and Zr substituted Bi4Ti3O12 thin films10.1063/1.1738936 ↗
15. Room-temperature preparation and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on flexible polyimide substrates via pulsed laser deposition method10.1016/j.apsusc.2012.01.140 ↗
16. Effect of Ho content on microstructure and ferroelectric properties of Bi4−xHoxTi3O12 thin films prepared by Sol-Gel method10.1111/j.1551-2916.2008.02664.x ↗
17. Improved ferroelectric and fatigue properties in Zr doped Bi4Ti3O12 thin films10.1016/j.matlet.2014.07.182 ↗
18. Dielectric functions and energy band gap variation studies of manganese doped Bi3.25La0.75Ti3O12 thin films using spectroscopic ellipsometry10.1016/j.jallcom.2014.07.216 ↗
19. The microstructure and ferroelectric properties of Sm and Ta-doped bismuth titanate ferroelectric thin films10.1016/j.tsf.2012.10.074 ↗
20. Ferroelectric properties of vanadium-doped Bi4Ti3O12 thin films deposited by a sol–gel method10.1063/1.1494840 ↗
21. Electrical and optical properties of ferroelectric Bi4Ti3O12 single crystals10.1063/1.1656542 ↗
22. Crystal structure and enhanced electromechanical properties of Aurivillius ferroelectric ceramics, Bi4Ti3-x(Mg1/3Nb2/3)xO1210.1016/j.scriptamat.2013.11.025 ↗
23. Effect of an in-situ applied electric field on growth of Bi4Ti3O12 films by sol–gel10.1016/j.apsusc.2006.01.057 ↗
24. Mixed grains and orientation-dependent piezoelectricity of polycrystalline Nd-substituted Bi4Ti3O12 thin films10.1016/j.ceramint.2016.05.086 ↗
25. Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-aixs orientation on silicon substrates10.1126/science.1069958 ↗
26. Deposition of bismuth-titanate films with liquid-delivery spin MO-CVD10.1016/j.mseb.2007.07.065 ↗
27. Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering10.1007/s003390000563 ↗
28. Natural-superlattice structured CaBi2Nb2O9 -Bi4Ti3O12 ferroelectric thin films10.1016/j.ceramint.2017.03.197 ↗
29. Ferroelectric properties of (117)- and (001)-oriented Bi3.25La0.75Ti3O12 polycrystalline thin films10.1063/1.1516234 ↗
30. Influence of Bi excess on electrical properties of Bi3.25+xLa0.75Ti3O12+δ thin films10.1080/00150190500311458 ↗
31. Dielectric and ferroelectric properties of Ta-modified Bi3.25La0.75Ti 3O12 ceramics10.1016/j.ceramint.2017.07.013 ↗
32. C-axis-oriented Bi3.25La0.75Ti3O12 ferroelectric thin film fabricated by chemical solution deposition10.1016/j.matlet.2006.10.046 ↗
33. Dielectric spectroscopy and ferroelectric properties of magnesium modified bismuth titanate ceramics10.1016/j.jallcom.2016.07.173 ↗
34. Ion-beam-induced chemical changes in the oxyanions (Moyn-) and oxides (Mox) where M = chromium, molybdenum, tungsten, vanadium, niobium and tantalum10.1021/j100302a027 ↗
35. X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)10.1016/0301-0104(77)85033-7 ↗
36. Inner-orbital binding-energy shifts of antimony and bismuth compounds10.1021/ic50122a054 ↗
37. X-ray photoelectron spectroscopy and optical studies of Bi12(GaxBi1-x)O20-δ and Bi12(ZnxBi1-x)O20-δ single crystals10.1016/0022-3697(96)00036-4 ↗
38. D. Gonbeau, C. Guimon, G.P. fister, XPS study of thin films of titanium oxysulfides 254 (1991) 81–89.10.1016/0039-6028(91)90640-E ↗
39. Differences in nature of electrical conductions among Bi4Ti3O12-based ferroelectric polycrystalline ceramics
40. Intrinsic electric field assisted polymeric graphitic carbon nitride coupled with Bi4Ti3O12/Bi2Ti2O7 heterostructure nanofibers toward enhanced photocatalytic hydrogen evolution10.1016/j.ijhydene.2016.07.162 ↗
41. Measurement of hardness and elastic modulus by instrumented indentation: advances in understanding and refinements to methodology10.1557/jmr.2004.19.1.3 ↗
42. Thickness dependent mechanical and ferroelectric properties of Bi4Ti3O12 film
43. The origin of the ferroelectricity in the bismuth titanate Bi4Ti3O12 with perovskite-like layered structure10.4028/www.scientific.net/SSP.226.17 ↗
44. Dielectric abnormality and ferroelectric asymmetry in W/Cr co-doped Bi4Ti3O12 ceramics based on the effect of defect dipoles10.1016/j.jallcom.2016.11.322 ↗
45. The nature of domain stabilization in ferroelectric perovskites10.1016/0022-3697(86)90042-9 ↗
46. Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics10.1063/1.126786 ↗
47. Polarization suppression in Pb(Zr, Ti)O3 thin films10.1063/1.359083 ↗
48. Ferroelectric, dielectric, and optical properties of Nd-substituted Bi4Ti3O12 nanoparticles synthesized by sol-gel method10.1016/j.pnsc.2016.11.001 ↗
49. Ferroelectric materials for microwave tunable applications10.1023/B:JECR.0000015661.81386.e6 ↗
50. Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: evidence of an interfacial space charge layer10.1063/1.126367 ↗
51. Asymmetric polarization of defect dipoles in Bi4Ti3O12 and Bi2Ti4O11 ceramics with Na+ and La3+ modifications10.1103/PhysRevB.60.9204 ↗
52. B-site doping effect on electrical properties of Bi4Ti3-2xNbxTaxO ceramics10.1016/j.scriptamat.2009.06.012 ↗