Mn4+:BiFeO3/Zn2+:BiFeO3 bilayered thin films of (111) orientation
Source abstract
Abstract
Abstract Ferroelectric and fatigue behavior of bilayered thin films consisting of Mn 4+ -modified BiFeO 3 and Zn 2+ -modified BiFeO 3 , which were deposited on SrRuO 3 -buffered Pt coated silicon substrates, were systematically investigated. The (1 1 1) orientation is induced for the BiFe 0.95 Mn 0.05 O 3 /BiFe 0.95 Zn 0.05 O 3 bilayer, due to the introduction of the bottom BiFe 0.95 Zn 0.05 O 3 layer. With increasing the thickness ratio of the BiFe 0.95 Mn 0.05 O 3 layer, their leakage current decreases, and the fatigue endurance is greatly improved owing to the introduction of the BiFe 0.95 Mn 0.05 O 3 layer with a lower fatigue rate. The BiFe 0.95 Mn 0.05 O 3 /BiFe 0.95 Zn 0.05 O 3 bilayer with the thickness ratio of 3:1 exhibits a larger remanent polarization of 2 P r ∼ 161.0 μC/cm 2 than those of bilayers with different thickness ratios, while their coercive field slightly increases with increasing the thickness ratio of the BiFe 0.95 Mn 0.05 O 3 layer.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magneto-Optical Properties and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. Fiebig · J. Phys. D · 2005 · 38 · R12310.1088/0022-3727/38/8/R01 ↗
2. Eerenstein · Nature (London) · 2006 · 442 · 75910.1038/nature05023 ↗
3. Scott · Science · 2007 · 315 · 95410.1126/science.1129564 ↗
4. Ramesh · Nat. Mater. · 2007 · 6 · 2110.1038/nmat1805 ↗
5. Béa · J. Phys.: Condens. Matter · 2008 · 20 · 43422110.1088/0953-8984/20/43/434221 ↗
6. Catalan · Adv. Mater. · 2009 · 21 · 246310.1002/adma.200802849 ↗
7. Martin · Mater. Sci. Eng. R · 2010 · 68 · 13310.1016/j.mser.2010.03.001 ↗
8. Wang · Science · 2003 · 299 · 171910.1126/science.1080615 ↗
9. Fischer · J. Phys. C: Solid State Phys. · 1980 · 13 · 193110.1088/0022-3719/13/10/012 ↗
10. Wu · J. Appl. Phys. · 2009 · 106 · 10411110.1063/1.3261841 ↗
11. Singh · J. Appl. Phys. · 2007 · 102 · 09410910.1063/1.2812594 ↗
12. Lee · Appl. Phys. Lett. · 2007 · 91 · 10290610.1063/1.2775089 ↗
13. Wu · Appl. Phys. Lett. · 2009 · 94 · 17290610.1063/1.3127519 ↗
14. Murari · J. Appl. Phys. · 2009 · 106 · 01410310.1063/1.3158556 ↗
15. Singh · J. Phys. D · 2007 · 40 · 270510.1088/0022-3727/40/9/004 ↗
16. Cheng · Phys. Rev. B · 2008 · 77 · 09210110.1103/PhysRevB.77.092101 ↗
17. Wu · J. Appl. Phys. · 2009 · 106 · 05411510.1063/1.3213335 ↗
18. Zhao · Appl. Phys. Lett. · 2009 · 95 · 23290410.1063/1.3271032 ↗
19. Yoon · J. Appl. Phys. · 1998 · 83 · 362610.1063/1.366581 ↗
20. Wu · Appl. Phys. Lett. · 2007 · 90 · 08290210.1063/1.2475735 ↗
21. Qi · Appl. Phys. Lett. · 2005 · 86 · 06290310.1063/1.1862336 ↗
22. Wu · Electrochem. Solid State Lett. · 2010 · 13 · G10510.1149/1.3490762 ↗
23. Li · J. Appl. Phys. · 2005 · 98 · 06410810.1063/1.2058174 ↗
24. Hu · J. Alloys Compd. · 2010 · 150 · 1088
25. Zhong · Appl. Phys. Lett. · 2009 · 95 · 11290210.1063/1.3231073 ↗
26. Neaton · Phys. Rev. B · 2005 · 71 · 01411310.1103/PhysRevB.71.014113 ↗
27. Scott · Appl. Phys. Lett. · 2000 · 76 · 380110.1063/1.126786 ↗