High performance indium dysprosium oxide thin-film transistors grown from aqueous solution
Source abstract
Abstract
Abstract Indium dysprosium oxide (InDyO) thin-film transistors (TFTs) are demonstrated by aqueous solution processing. The structure, morphology, chemical, oxygen defects, optical, and electrical properties of InDyO films with the change of Dy doping contents are systematically studied. It is observed that Dy doping could effectively improve the off current and the bias stress stability of the In2O3 devices due to the suppression of oxygen vacancies (VO). The optimized InDyO TFTs with 10 mol% Dy doping exhibit excellent electrical characteristics, including a μ of 7.60 cm2 V−1 s−1, high Ion/Ioff >108, small SS of 0.77 V/dec, Vth of 1.78 V, and excellent bias stress stability. Therefore, the InDyO TFTs grown from aqueous solution enable the development of environmentally friendly and large area electronics.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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