An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III–V compound semiconductors with prior neutral cesium deposition
Source abstract
Abstract
Abstract A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III–V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P − emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III–V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. The development of SIMS and international SIMS conferences: a personal retrospective view10.1002/sia.3688 ↗
2. Broadening the horizons of SIMS: the low cost chemical microscope10.1016/S0169-4332(98)00776-4 ↗
3. Characterization of Al+ secondary ion emission produced by Ne+ and Ar+ bombardment of aluminum surface10.1142/S0218625X04006281 ↗
4. High-temperature oxidation of CrN/AlN multilayer coatings10.1016/j.apsusc.2005.02.105 ↗
5. The ORNL atom probe
6. A time-of-flight mass spectrometer for SIMS and field ionized neutral analysis using a pulsed LMIS
7. Secondary ion yield variations due to cesium implantation in silicon10.1016/0039-6028(83)90760-4 ↗
8. Exponential scaling of sputtered negative-ion yields with transient work-function changes on Cs+-bombarded surfaces10.1103/PhysRevB.54.16456 ↗
9. Useful yields of MCs+ and MCs2+ clusters: a comparison study between the Cameca IMS 4f and the cation mass spectrometer10.1016/S1387-3806(01)00467-5 ↗
10. Emission of negative ions from metal surfaces bombarded by positive cesium ions10.1063/1.1702439 ↗
11. SIMS analysis with neutral cesium deposition: negative secondary ion sensitivity increase and quantification aspects10.1016/j.ijms.2006.02.018 ↗
12. Neutral cesium deposition prior to SIMS analysis of organic and inorganic samples10.1002/sia.3336 ↗
13. Characterization of DLCfilms deposited using titanium isopropoxide (TIPOT) at different flow rates10.1166/jnn.2009.M49 ↗
14. Identification of human calculi with time-of-flight secondary ion mass spectrometry10.1002/rcm.4376 ↗
15. Time-of-flight secondary ion mass spectrometric identification of calcium formate Ca(HCO2)2 and metabolite of vitamin B6 in human stones10.1002/rcm.4941 ↗
16. Multiple-focusing time of flight mass spectrometers. Part I. TOFMS with equal momentum acceleration10.1016/0020-7381(71)85019-2 ↗
17. Multiple-focusing time of flight mass spectrometers. Part II. TOFMS with equal energy acceleration10.1016/0020-7381(72)80020-2 ↗
18. Focusing errors of a multiple-focusing time-of-flight mass spectrometer with an electrostatic sector field10.1016/0020-7381(75)85024-8 ↗
19. Cluster primary ion bombardment of organic materials10.1016/j.apsusc.2004.03.101 ↗
20. Room-temperature ionic liquids. Solvents for synthesis and catalysis10.1021/cr980032t ↗
21. Energy properties of an EMI-Im ionic liquid ion source10.1088/0022-3727/39/1/020 ↗
22. Study on imidazolium-based ionic liquids with scanning atom probe and Knudsen effusion mass spectrometry10.1002/sia.2906 ↗
23. Mass spectrometric analysis of imidazolium-based ionic liquids by scanning atom probe10.1016/j.ijms.2008.11.012 ↗
24. Low energy dual beam depth profiling: influence of sputter and analysis beam parameters on profile performance using TOF-SIMS10.1016/S0169-4332(02)00653-0 ↗
25. Shalimova · 1976
26. Available (2011): http://www.ioffe.rssi.ru/SVA/NSM/Semicond/index.html.
27. The electron affinity of phosphorous10.1088/0953-4075/40/20/010 ↗
28. Electron affinity of arsenic and the fine structure of As− measured using infrared photodetachment threshold spectroscopy10.1103/PhysRevA.80.014501 ↗
29. Single- and multiphoton infrared laser spectroscopy of Sb−: a case study10.1103/PhysRevLett.79.4104 ↗
30. Available (2011): http://www.webelements.com/.
31. Charged and excited states of sputtered atoms
32. Work function change caused by alkali ion sputtering of a sample surface10.1016/S0169-4332(00)00381-0 ↗
33. Correlation of alkali metal-induced work function changes on semiconductor and metal surfaces10.1116/1.584580 ↗
34. 2005
35. Available (2011): http://www.srim.org/.
36. Sputtering of multicomponent materials
37. Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS10.1016/j.apsusc.2004.03.130 ↗
38. Cesium ion sputtering with oxygen flooding: experimental SIMS study of work function change10.1016/j.apsusc.2008.01.145 ↗
39. Negative ion yield and sputter yield variations for Cs+ bombardment of Si with O2 gas flooding10.1002/sia.3483 ↗
40. Cesium retention during sputtering with low energy Cs+ and oxygen flooding10.1002/sia.3676 ↗
41. Ionization of atoms sputtered from AIIIBV compounds10.1016/0167-5087(83)91003-7 ↗