The defects regulating for the electronic structure and optical properties of 4H-SiC with (0001) surface
Source abstract
Abstract
Abstract The electronic structure and optical properties of 4H-SiC bulk, pristine (0001) surface and the (0001) surface with defects have been studied by the first principles plane wave method. The results showed that 4H-SiC is an indirect semiconductor with the band gap of 2.045 eV, the pristine (0001) surface was an indirect n type semiconductor with the band gap of 0.65 eV, the (0001) surface with defect of carbon vacancy (V C ) was an indirect p type semiconductor with the band gap of 0.46 eV, the (0001) surface with substitution Si for C (Si C ) was a semimetal. The optical properties of 4H-SiC were modulated by the electronic bonding types of Si 3p and C 2p. The calculation provided theoretical reference for the study of 4H-SiC.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Boron and Carbon Nanomaterials Research · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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