Electrical, electronic and optical properties of amorphous indium zinc tin oxide thin films
Source abstract
Abstract
Abstract The electrical and optical properties of amorphous indium zinc tin oxide (a-IZTO) thin films were examined as a function of chemical composition. Effects of Sn/Zn composition ratio and In content on the electrical and optical properties of a-IZTO thin films are discussed. The electron mobility of thin film transistors with higher Sn/Zn composition ratio was dramatically improved due to a shorter zinc–zinc separation distance. The thin film transistor with the composition of In:Zn:Sn = 20:48:32 exhibits a high mobility of 30.6 cm 2 V −1 s −1 and a high on–off current ratio of 10 9 .
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Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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