journal article·2025-12

A novel AZO capping approach on SnO thin-film transistors for efficient threshold voltage modulation and electrical performance enhancement

Jongyoun Park, Sungjoo Song, Seung Hwan Kim, Jong-Hyun Kim, Jeong-Kyu Kim, Hyun-Yong Yu

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OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Semiconductor materials and devices

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References (55)

Show source-provided references
1. Schottky barrier height modulation using interface characteristics of MoS2 interlayer for contact structure10.1021/acsami.8b18860 ↗
2. Back-end-of-line compatible transistors for monolithic 3-D integration10.1109/MM.2019.2942978 ↗
3. IEEE Electron Devices Society, Calif. IEEE International Electron Devices Meeting 60 2014.12.15-17 San Francisco, Calif. IEDM 60 2014.12.15-17 San Francisco, IEEE International Electron Devices Meeting (IEDM), 2014 15-17 Dec. 2014, San Francisco, CA, n.d.
4. FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration10.1016/j.sse.2015.05.005 ↗
5. Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors10.1063/1.5065537 ↗
6. Hydrogen-defect termination in SnO for p-channel TFTs10.1021/acsaelm.0c00149 ↗
7. Switching Mechanism behind the Device operation Mode in SnO-TFT10.1002/aelm.202000742 ↗
8. Magnetron-sputtered SnO thin films for p-type and ambipolar TFT applications10.1149/2.017409jss ↗
9. Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing10.1063/1.3469939 ↗
10. Why In2O3Can make 0.7 nm atomic layer thin transistors10.1021/acs.nanolett.0c03967 ↗
11. Present status of amorphous In-Ga-Zn-O thin-film transistors10.1088/1468-6996/11/4/044305 ↗
12. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing10.1038/nmat3011 ↗
13. Novel source/drain contact structure for a-IGZO devices: oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach10.1016/j.apsadv.2024.100676 ↗
14. First demonstration of Yttria-stabilized hafnia-based long-retention solid-state electrolyte-gated transistor for human-like neuromorphic computing10.1002/smll.202309467 ↗
15. Enhancement of the proton-electron coupling effect by an ionic oxide-based proton reservoir for high-performance artificial synaptic transistors10.1021/acsnano.4c10732 ↗
16. Progress and challenges in p-type oxide-based thin film transistors10.1515/ntrev-2019-0038 ↗
17. Enhanced electrical performance of InGaSnO thin-film transistors by designing a dual-active-layer structure10.1016/j.apsusc.2023.158995 ↗
18. Investigation of the electrical performance and carrier transport mechanism for heterostructured bilayer In2O3/InGaSnO thin-film transistors10.1063/5.0231796 ↗
19. Design of high-performance dual-channel-layered InGaZnO thin-film transistors with different indium contents10.1109/TED.2025.3538524 ↗
20. Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors10.1063/5.0264102 ↗
21. Origins of the p-type nature and cation deficiency in Cu2O and related materials10.1103/PhysRevB.76.045209 ↗
22. Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels10.1103/PhysRevB.84.205207 ↗
23. Solution processing of transparent conductors: from flask to film10.1039/c1cs15065k ↗
24. Challenges in p-type oxide based thin film transistor10.1088/1757-899X/1012/1/012055 ↗
25. Epitaxial growth of high mobility Cu2O thin films and application to p -channel thin film transistor10.1063/1.3026539 ↗
26. Recent developments in p-type oxide semiconductor materials and devices10.1002/adma.201503080 ↗
27. Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering10.1039/C9TC04345D ↗
28. Structural and electronic properties of SnO downscaled to monolayer10.3390/ma15165578 ↗
29. Quantum electronic transport properties of 3d transition metal doped SnO monolayer for spin-thin film transistor10.1007/s11082-024-07089-w ↗
30. First principles investigation of 3d transition metal doped SnO monolayer based diluted magnetic semiconductors10.1016/j.jmmm.2023.170897 ↗
31. First principles investigations on electronic and magnetic properties of Fe: SnO monolayer10.1007/s11082-023-05186-w ↗
32. Density functional theory study on magnetic character and mn crystal field split levels in Mn-doped SnO monolayer10.1007/s10948-022-06355-w ↗
33. Origin of ambipolar behavior in p-type tin monoxide semiconductors: impact of oxygen vacancy defects10.1109/TED.2021.3099081 ↗
34. Influence of plasma fluorination on p-type channel tin-oxide thin film transistors10.1016/j.jallcom.2016.11.294 ↗
35. Enhanced performance of p-type SnO x thin film transistors through defect compensation10.1088/1361-648X/ac8464 ↗
36. Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films10.1039/C6TC04750E ↗
37. Structural, chemical, optical, and electrical evolution of SnOx films deposited by reactive rf magnetron sputtering10.1021/am301601s ↗
38. First-principles calculations of native defects in tin monoxide10.1103/PhysRevB.74.195128 ↗
39. Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application10.1002/pssa.200881792 ↗
40. Fermi level depinning in Ti/GeO2/n-Ge via the interfacial reaction between Ti and GeO210.1109/TED.2017.2736163 ↗
41. C.C. Shin, C. Hu, Semiconductor Science and Technology Thin gate oxide damage due to plasma processing You may also like Thin gate oxide damage due to plasma processing, 1996.10.1088/0268-1242/11/4/002 ↗
42. Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability10.1016/j.apsusc.2021.150947 ↗
43. Rational design of oxide heterostructure InGaZnO/TiO2 for high-performance thin-film transistors10.1016/j.apsusc.2022.155257 ↗
44. Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistors10.1088/0268-1242/29/4/045001 ↗
45. On the wrong assignment of the XPS O1s signal at 531–532 eV attributed to oxygen vacancies in photo- and electro-catalysts for water splitting and other materials applications10.1016/j.susc.2021.121894 ↗
46. The effect of interfacial dipoles on the metal-double interlayers-semiconductor structure and their application in contact resistivity reduction10.1021/acsami.6b10376 ↗
47. K. Kita, A. Toriumi, Intrinsic Origin of Electric Dipoles Formed at High-k/SiO2 Interface, n.d.
48. P -channel thin-film transistor using p -type oxide semiconductor, SnO10.1063/1.2964197 ↗
49. Off-current reduction in p-type SnO thin film transistors10.1063/1.5037306 ↗
50. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments10.1088/1361-6641/aa72b8 ↗
51. Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor10.1021/acsami.9b14462 ↗
52. Fabrication of p-type SnO thin-film transistors by sputtering with practical metal electrodes10.7567/JJAP.52.05DC07 ↗
53. Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors10.7567/JJAP.55.016501 ↗
54. Gate-bias stress stability of P-type SnO thin-film transistors fabricated by RF-sputtering10.1109/LED.2013.2291896 ↗
55. Phase and optical characterizations of annealed SnO thin films and their p-type TFT application10.1149/1.3385390 ↗