Fine-tuning the carrier properties of GaN via low-energy O ion irradiation to enhance electrical and optoelectronic performance
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (48)
Show source-provided references
1. Blue luminescence origin and Mg acceptor saturation in highly doped zinc-blende GaN with Mg10.1016/j.jallcom.2021.163133 ↗
2. Radiation damage in wide and ultra-wide bandgap semiconductors10.1149/2162-8777/abfc23 ↗
3. Phosphor-based InGaN/GaN white light-emitting diodes with monolithically integrated photodetectors10.1109/TED.2020.3035734 ↗
4. A simulation approach for investigating the performances of cadmium telluride solar cells using doping concentrations, carrier lifetimes, thickness of layers, and band gaps10.1016/j.solener.2020.12.070 ↗
5. Wide band gap chalcogenide semiconductors10.1021/acs.chemrev.9b00600 ↗
6. Annealing effect on threading dislocations in a GaN grown on Si substrate10.1016/j.jcrysgro.2017.01.001 ↗
7. Growth of GaN layers on Si (111) substrates by plasma-assisted molecular beam epitaxy10.1134/S1063782618050342 ↗
8. Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy10.1063/1.4998485 ↗
9. Two-dimensional semiconductors: from device processing to circuit integration10.1002/adfm.202304778 ↗
10. Advances and significances of nanoparticles in semiconductor applications–A review10.1016/j.rineng.2023.101347 ↗
11. Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors10.1016/j.apsusc.2024.160861 ↗
12. Impact of radiation damage on the photoconductor and photodiode properties of GaN core-shell p-n junction microwires10.1016/j.radphyschem.2024.111945 ↗
13. Optimization of all figure-of-merits in well-aligned GaN microwire array based Schottky UV photodetectors by Si doping10.1021/acsphotonics.9b00363 ↗
14. Effect of Si doping on the performance of GaN Schottky barrier ultraviolet photodetector grown on Si substrate
15. A review of recent applications of ion beam techniques on nanomaterial surface modification: Design of nanostructures and energy harvesting10.1002/smll.201901820 ↗
16. Application of ion beam technology in (photo) electrocatalytic materials for renewable energy10.1063/5.0021322 ↗
17. Recent Progress in the Application of Ion Beam Technology in the Modification and Fabrication of Nanostructured Energy Materials10.1021/acsnano.3c07896 ↗
18. Enhanced photoelectric performance of GaN-based Micro-LEDs by ion implantation10.1016/j.optmat.2021.111579 ↗
19. The contribution of defects to the electrical and optical properties of GaN
20. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: a comprehensive review10.1016/j.microrel.2024.115445 ↗
21. Structural and mechanical modifications of GaN thin films by swift heavy ion irradiation10.1016/j.vacuum.2021.110639 ↗
22. First-principles density functional theory study of modified germanene-based electrode materials10.3390/ma15010103 ↗
23. Crystal growth of GaN by ammonothermal method10.1016/j.jcrysgro.2003.08.031 ↗
24. Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations10.1002/er.6744 ↗
25. Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1–xAlxN, Al1–xGaxN, and Ga1–xInxN)10.1021/acsami.0c11124 ↗
26. 2D/3D hybrid of MoS2/GaN for a high-performance broadband photodetector10.1021/acsaelm.1c00299 ↗
27. Weighted mobility10.1002/adma.202001537 ↗
28. Spectral signatures and properties of carbon defects in GaN and AlN
29. Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode10.35848/1347-4065/acb2a4 ↗
30. Raman scattering of coupled longitudinal optical phonon‐plasmon modes in dry etched n+‐GaAs10.1063/1.350885 ↗
31. Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs10.1063/1.348957 ↗
32. Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering10.1063/1.338830 ↗
33. Mixing of visible and near-resonance infrared light in GaP10.1103/PhysRevLett.17.1265 ↗
34. In The dislocation density of GaN LED epitaxial films grown on Si substrates characterized by X-ray diffraction
35. Reduction mechanisms for defect densities in GaN using one-or two-step epitaxial lateral overgrowth methods10.1063/1.373048 ↗
36. The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors10.1038/s41598-020-73977-2 ↗
37. Optical and electrical properties of CuO thin films by spray pyrolysis method
38. PL characterization of GaN scintillator for radioluminescence-based dosimetry10.1016/j.optmat.2008.09.012 ↗
39. Defect-control electron transport behavior of gallium nitride/silicon nonplanar-structure heterojunction10.1088/1361-6463/ac78a2 ↗
40. Photoluminescence from defects in GaN
41. Yellow and green luminescence in a freestanding GaN template10.1063/1.1371961 ↗
42. Influence of highly-charged 209Bi33+ irradiation on structure and optoelectric characteristics of GaN epilayer10.1016/j.nimb.2017.04.056 ↗
43. Dose-dependent bonding environment of oxygen implanted in GaN10.1016/j.nimb.2009.09.045 ↗
44. Moiré contrast in the local tunneling barrier height images of monolayer graphite on Pt (111)10.1103/PhysRevB.61.15653 ↗
45. Rational constructing 2D/3D pn heterojunctions to modulate hydrogen evolution efficient pathways for enhances photocatalytic hydrogen production10.1016/j.jiec.2024.07.052 ↗
46. Band-structure tunability via the modulation of excitons in semiconductor nanostructures: manifestation in photocatalytic fuel generation10.1039/D3NR02116E ↗
47. Thickness trends of electron and hole conduction and contact carrier injection in surface charge transfer doped 2D field effect transistors10.1021/acsnano.0c05572 ↗
48. Low-resistance 2D/2D ohmic contacts: a universal approach to high-performance WSe2, MoS2, and MoSe2 transistors10.1021/acs.nanolett.5b05066 ↗