journal article·2025-03

Solution-based surface modification method for high-performance ZnO transistors

Qinyuan Wang, Junchen Dong, Jinlong Lin, Dedong Han, Xing Zhang

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Abstract

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OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Semiconductor materials and devices

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References (44)

Show source-provided references
1. Ultrathin, flexible, and transparent oxide thin-film transistors by delamination and transfer methods for deformable displays10.1002/admt.202100431 ↗
2. Performance analysis of AlGaN MOSHEMT based biosensors for detection of proteins10.1007/s42341-023-00434-y ↗
3. Transparent capacitive-type fingerprint sensing based on zinc oxide thin-film transistors10.1109/LED.2019.2895830 ↗
4. Biosensors based on zinc oxide thin-film transistors using recyclable plastic substrates as an alternative for real-time pathogen detection10.1016/j.talanta.2021.122970 ↗
5. Heterogeneous integration of atomically-thin indium tungsten oxide transistors for low-power 3D monolithic complementary inverter
6. Recent progress in the development of backplane thin film transistors for information displays10.1080/15980316.2023.2219030 ↗
7. Highly scaled BEOL-compatible thin film transistors with ultrathin atomic layer deposited indium-tin-zinc-oxide channel10.1109/TED.2024.3385395 ↗
8. Transparent and flexible zinc oxide-based thin-film diodes and thin-film transistors: a review10.1063/5.0169308 ↗
9. Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures10.1080/15980316.2021.2011443 ↗
10. Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency10.1109/LED.2022.3225263 ↗
11. Indium oxide nanomesh-based electrolyte-gated synaptic transistors10.1080/15980316.2021.1911866 ↗
12. Compact and ultrathin multi-element oxide films grown by temperature-controlled deposition and their surface-potential based transistor theoretical simulation model10.1039/D0TC00506A ↗
13. Recent progress of oxide-TFT-based inverter technology10.1080/15980316.2021.1977401 ↗
14. Back-end-of-line-compatible fin-gate ZnO ferroelectric field-effect transistors10.1109/TED.2023.3242852 ↗
15. Microwave annealing as a low thermal budget technique for ZnO thin-film transistors fabricated using atomic layer deposition10.1109/LED.2017.2740221 ↗
16. High performance three-dimensional double-stacked multiple-nanochannel and quadruple-nanogate zno-based fin metal-oxide-semiconductor field-effect transistors10.1149/2.0281712jss ↗
17. Liquid-solid interface engineering of ultrathin and solution-processed indium oxide-based electrolyte-gated transistors by gallium doping10.1021/acsaelm.3c01563 ↗
18. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O310.1039/D2NR02736D ↗
19. Enhanced electrical performance of InGaSnO thin-film transistors by designing a dual-active-layer structure10.1016/j.apsusc.2023.158995 ↗
20. Interface and border traps in the gate stack of carbon nanotube film transistors with an Yttria dielectric10.1021/acsaelm.3c00613 ↗
21. Effective atmospheric-pressure plasma treatment toward high-performance solution-processed oxide thin-film transistors10.1021/acsami.8b11111 ↗
22. Effects of interface states on electrical characteristics of feedback field-effect transistors10.1109/ACCESS.2023.3281358 ↗
23. Lowering of interface state density between deposited gate oxide and SiC substrate via controlling substrate oxidation10.1016/j.vacuum.2024.112999 ↗
24. High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition10.1016/j.apsusc.2023.158950 ↗
25. Using oxygen-plasma treatment to improve the photoresponse of Mg 0.18 Zn 0.82 O/p-Si heterojunction photodetectors10.1016/j.jallcom.2015.10.065 ↗
26. Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability10.1016/j.apsusc.2021.150947 ↗
27. Analysis of electronic characteristics of plasma-enhanced indium zinc oxide thin film transistors10.1007/s42835-022-01169-1 ↗
28. Effects of oxygen-plasma treatment on the structure and optical properties of MgxZn1−xO films10.1016/j.mssp.2017.03.001 ↗
29. Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors10.1016/j.apsusc.2023.158651 ↗
30. Impact of NH3 plasma treatment for solution-processed indium oxide thin-film transistors with low thermal budget10.1016/j.jallcom.2019.152720 ↗
31. Characterization techniques of ion bombardment damage on electronic devices during plasma processing - Plasma process-induced damage10.35848/1347-4065/abe47c ↗
32. Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs10.1016/j.apsusc.2020.148710 ↗
33. Metal oxide semiconductor thin-film transistors for flexible electronics10.1063/1.4953034 ↗
34. High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing10.1016/j.apsusc.2022.155533 ↗
35. Improving the charge injection in bottom contact organic transistors by carbon electrodes10.1039/D1TC05136A ↗
36. A simple intermediate approach of sputter deposition at room temperature for improving the stability of a-InGaZnO thin film transistors10.1007/s13391-023-00416-5 ↗
37. Performances of thin film transistors with Ga-doped ZnO source and drain electrodes10.1088/1361-6463/ac0b0e ↗
38. Epitaxy and bonding of peelable ZnO film on graphene/ZnO substrate10.1016/j.jallcom.2022.167129 ↗
39. Defect engineering of ZnO: Review on oxygen and zinc vacancies10.1016/j.jeurceramsoc.2021.03.031 ↗
40. Properties of the oxygen vacancy in ZnO10.1007/s00339-007-3956-2 ↗
41. Deep vs shallow nature of oxygen vacancies and consequent $n$-type carrier concentrations in transparent conducting oxides
42. Modeling and understanding threshold voltage and subthreshold swing in ultrathin channel oxide semiconductor transistors
43. Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy10.1109/TED.2011.2105879 ↗
44. A Unified Degradation model of elevated-metal metal oxide (EMMO) TFTs under positive gate bias with or without an illumination10.1109/TED.2021.3053915 ↗