Ferroelectric switching behavior in GaN HEMTs with CMOS-compatible Hf0.5Zr0.5O2/Al2O3 dielectric layer
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OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices
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References (48)
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1. Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectives10.1109/TED.2023.3346369 ↗
2. Amping up the PA for 5G: efficient GaN power amplifiers with dynamic supplies10.1109/MMM.2017.2664018 ↗
3. Room temperature 2DEG mobility above 2350 cm2/V·s in AlGaN/GaN HEMT grown on GaN substrate10.1007/s11664-021-08778-y ↗
4. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy
5. W. Huang, Z. Li, T.P. Chow, Y. Niiyama, S. Yoshida, Enhancement-mode gan hybrid mos-hemts with ron,sp of 20 mω-cm2, in: International Symposium on Power Semiconductor Devices & Ics, 2008.10.1109/ISPSD.2008.4538957 ↗
6. Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage10.1049/el.2010.1939 ↗
7. Effect of gate leakage in the subthreshold characteristics of AlGaN/GaN HEMTs10.1109/LED.2008.2005257 ↗
8. AlGaN/GaN MISHEMTs with high-κ LaLuO3/ gate dielectric10.1109/LED.2012.2195291 ↗
9. Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas10.1063/1.5123192 ↗
10. Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT
11. Pulsed E-/D-Mode switchable GaN HEMTs With a ferroelectric AlScN gate dielectric10.1109/LED.2023.3287913 ↗
12. Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures10.1039/C8TC05795H ↗
13. Ferroelectricity in hafnium oxide thin films10.1063/1.3634052 ↗
14. High-performance normally-OFF GaN MIS-HEMTs using hybrid ferroelectric charge trap gate stack (FEG-HEMT) for power device applications10.1109/LED.2018.2825645 ↗
15. Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance10.1109/LED.2017.2778276 ↗
16. Hf0.5Zr0.5O2-based ferroelectric gate HEMTs with large threshold voltage tuning range10.1109/LED.2020.2965330 ↗
17. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
18. Ferroelectricity in simple binary ZrO2 and HfO210.1021/nl302049k ↗
19. Stabilization of tetragonal HfO2 under low active oxygen source environment in atomic layer deposition10.1021/cm3001199 ↗
20. Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs10.1016/j.apsusc.2022.153709 ↗
21. Composition-dependent ferroelectric properties in sputtered HfXZr1−XO2 thin films10.1109/LED.2019.2902609 ↗
22. Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering10.1088/1361-6528/aa7624 ↗
23. Huge reduction of the wake-up effect in ferroelectric HZO thin films10.1021/acsaelm.9b00367 ↗
24. Polarization engineering in PZT/AlGaN/GaN high-electron-mobility transistors10.1109/TED.2018.2844335 ↗
25. BV> 3 kV/V TH= 3.5 V normally-Off Al0.6Ga0.4N MOSFET with recessed-gate and ferroelectric gate dielectric10.1109/LED.2022.3216612 ↗
26. High-performance normally-OFF GaN MIS-HEMTs Using hybrid ferroelectric charge trap gate stack (FEG-HEMT) for power device applications
27. Research on the reliability of threshold voltage based on GaN high-electron-mobility transistors10.3390/mi15030321 ↗
28. AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs10.1109/TED.2015.2420690 ↗
29. Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel10.1063/1.5078767 ↗
30. Improved performance of fully-recessed high-threshold-voltage GaN MIS-HEMT with in situ H2/N2 plasma pretreatment10.1109/LED.2022.3179136 ↗
31. Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs10.1016/j.apsusc.2020.148710 ↗
32. Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes
33. Low ON-state resistance normally-OFF AlGaN/GaN MIS-HEMTs with partially recessed gate and ZrOx charge trapping layer10.1109/TED.2021.3100002 ↗
34. Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs
35. Hf0.5Zr0.5O2-based ferroelectric gate AlGaN/GaN HEMTs with steep subthreshold swings10.1109/TED.2023.3311412 ↗
36. 1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure10.1063/5.0235148 ↗
37. Retention mechanism study of the ferroelectric field effect transistor10.1063/1.3609323 ↗
38. Why is FE–HfO2 more suitable than PZT or SBT for scaled nonvolatile 1-T memory cell? A retention perspective10.1109/LED.2016.2593627 ↗
39. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?10.1109/LED.2002.1015207 ↗
40. Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures10.1063/1.2168506 ↗
41. T. Shih-Hao, F. Zihang, W. Xinghua, U. Chand, C.-K. Chen, S. Devi, S. Maheswari, J. Pan, E. Zamburg, A. THEAN VOON YEW, Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor, (2022).
42. K. Zhu, J. Wei, J. Wan, Negative capacitance GaN HEMT with improved subthreshold swing and transconductance, in: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), IEEE, 2019, pp. 1-2.10.1109/S3S46989.2019.9320724 ↗
43. β-Ga2O3 nanomembrane negative capacitance field-effect transistors with steep subthreshold slope for wide band gap logic applications10.1021/acsomega.7b01289 ↗
44. High-performance normally-OFF GaN MIS-HEMTs using hybrid ferroelectric charge trap gate stack (FEG-HEMT) for power device applications10.1109/LED.2018.2825645 ↗
45. Investigation of 5-nm-Thick Hf0.5Zr0.5O2 ferroelectric FinFET dimensions for sub-60-mV/decade subthreshold slope10.1109/JEDS.2019.2942381 ↗
46. A steep slope MBE-grown thin p-Ge channel FETs on bulk Ge-on-Si using HZO internal voltage amplification10.1109/TED.2022.3161857 ↗
47. First experimental demonstration of robust HZO/β-Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications in a high-temperature environment10.1109/TED.2021.3064783 ↗
48. Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx10.1016/j.nanoen.2019.104361 ↗