journal article·2025-07

B4C and WC as viable alternatives to SiC for plasma-facing components in semiconductor manufacturing

Hun Shim, Young-Jo Park, Seong-Hyeon Hong

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Metal and Thin Film Mechanics · Advanced ceramic materials synthesis · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (61)

Show source-provided references
1. Correlation with the microstructure and synergistic physiochemical etching resistance of nanocomposites under fluorine-containing plasma conditions10.1021/acsami.2c12311 ↗
2. Investigation of contamination particles generation and surface chemical reactions on Al2O3, Y2O3, and YF3 coatings in F-based plasma10.1016/j.apsusc.2023.157367 ↗
3. The grand challenges of plasma etching: a manufacturing perspective10.1088/0022-3727/47/27/273001 ↗
4. Processing map to control the erosion of Y2O3 in fluorine based etching plasmas10.1111/jace.18334 ↗
5. Plasma resistant glass (PRG) for reducing particulate contamination during plasma etching in semiconductor manufacturing: a review
6. Dry etching properties of TiO2 thin films in O2/CF4/Ar plasma10.1016/j.vacuum.2012.11.009 ↗
7. A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications10.1016/j.tsf.2015.02.060 ↗
8. Plasma etching—A discussion of mechanisms10.1116/1.569958 ↗
9. Lieberman · 2005
10. Optimization of silicon etch rate in a CF4/Ar/O2 inductively coupled plasma
11. Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition10.1116/1.4971171 ↗
12. Physiochemical etching characteristics and surface analysis of Y2O3-MgO nanocomposite under different CF4/Ar/O2 plasma atmospheres10.1016/j.apsusc.2023.158483 ↗
13. Grain size effect on the plasma etching behavior of spark plasma sintered yttria-stabilized zirconia ceramics10.1016/j.ceramint.2023.10.317 ↗
14. Relative sputtering rates of oxides and fluorides of aluminum and yttrium10.1016/j.surfcoat.2016.11.007 ↗
15. Effect of porosity on etching rate and crater-like microstructure of sintered Al2O3, Y2O3, and YAG ceramics in plasma etching10.1016/j.ceramint.2024.01.436 ↗
16. Erosion behavior of Y2O3 in fluorine‐based etching plasmas: Orientation dependency and reaction layer formation10.1111/jace.17556 ↗
17. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O310.1016/j.apsusc.2016.01.092 ↗
18. Microstructure and plasma corrosion behavior of yttria coatings prepared by the aerosol deposition method10.1111/jace.17193 ↗
19. Fluorination mechanisms of Al2O3 and Y2O3 surfaces irradiated by high-density CF4/O2 and SF6/O2 plasmas10.1116/1.3112624 ↗
20. Corrosion resistance of sintered SiC against fluorinated plasmas10.1116/1.5046792 ↗
21. Recycling SiC focus rings for reactive ion etching equipment by insertless diffusion bonding using hot isostatic pressing, ECS ECS10.1149/2162-8777/abd379 ↗
22. Plasma resistance and etch mechanism of high purity SiC under fluorocarbon plasma10.4191/kcers.2012.49.4.328 ↗
23. Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications10.1063/1.1534908 ↗
24. Surface characterization of inductively coupled plasma etched SiC in SF6/O210.1016/S0167-9317(03)00092-3 ↗
25. Effective activation energy for the solid-state sintering of silicon carbide ceramics10.1007/s11661-018-4884-9 ↗
26. Densification of surface-modified silicon carbide powder by spark-plasma-sintering10.1016/j.jeurceramsoc.2021.07.036 ↗
27. Ultra-high temperature spark plasma sintering of α-SiC10.1016/j.ceramint.2014.08.062 ↗
28. High aspect ratio silicon etch: A review10.1063/1.3474652 ↗
29. Gas-liquid chromatography of volatile metal fluorides10.1021/ac60232a030 ↗
30. Microstructures of binderless tungsten carbides sintered by spark plasma sintering process10.1016/S0921-5093(03)00151-5 ↗
31. Hot pressing of tungsten carbide with and without sintering additives10.1016/j.ijrmhm.2013.12.002 ↗
32. Consolidation and properties of binderless sub-micron tungsten carbide by field-activated sintering10.1016/j.ijrmhm.2004.08.003 ↗
33. Ultra-fast densification of boron carbide by flash spark plasma sintering10.1016/j.scriptamat.2016.02.012 ↗
34. Influence of spark plasma sintering parameters on densification and mechanical properties of boron carbide10.1016/j.ijrmhm.2013.09.004 ↗
35. Densification mechanisms and microstructural evolution during spark plasma sintering of boron carbide powders10.1016/j.ceramint.2017.11.061 ↗
36. Sparking plasma sintering of nanometric tungsten carbide10.1016/j.ijrmhm.2008.06.004 ↗
37. Cleaning aluminum fluoride coatings from plasma reactor walls in SiCl4/Cl2plasmas10.1088/0963-0252/16/4/004 ↗
38. Surface reaction during thermal atomic layer etching of aluminum oxide films using fluorine radicals and trimethylaluminum10.1016/j.apsusc.2023.158453 ↗
39. Surface chemical electronics at the semiconductor surface10.1016/S0169-4332(97)00259-6 ↗
40. Helium Ion-Assisted Wet Etching of silicon carbide with extremely low roughness for high-quality nanofabrication
41. Chemical modification of B4C films and B4C/Pd layers stored in different environments10.3390/ma14051319 ↗
42. Role of surface carbon nanolayer on the activation of flash sintering in tungsten carbide10.1016/j.ijrmhm.2022.106090 ↗
43. XPS study of surface chemistry of tungsten carbides nanopowders produced through DC thermal plasma/hydrogen annealing process10.1016/j.apsusc.2015.02.152 ↗
44. An XPS study of the fluorination of carbon anodes in molten NaF–AlF3–CaF210.1007/s10853-011-5772-5 ↗
45. Nanoalumina-supported Mn2O3 as efficient adsorbent for removal of fluoride and arsenic from water: a study from lab to field10.1007/s10853-022-07466-4 ↗
46. An X-ray Photoelectron spectroscopy investigation of redeposition from fluorine-based plasma etch on magnetic recording slider head substrate10.1016/j.proeng.2012.02.052 ↗
47. Case study of polyvinylidene fluoride doping by carbon nanotubes10.3390/ma14061428 ↗
48. Gurvich · 1966
49. Basic reaction steps in the sulfidation of crystalline tungsten oxides10.1021/jp0138734 ↗
50. Synthesis of silicon carbide using concentrated solar energy10.1016/j.solener.2015.04.006 ↗
51. Oxidation resistance of SiC ceramics prepared by different proceessing routes10.1016/j.jeurceramsoc.2016.03.016 ↗
52. Amorphous SiC coatings for WC cutting tools10.1016/S0257-8972(02)00486-3 ↗
53. Titanium carbide etching in high density plasma10.1016/S0169-4332(99)00143-9 ↗
54. Plasma etching: Yesterday, today, and tomorrow10.1116/1.4819316 ↗
55. Etching mechanism based on hydrogen fluoride interactions with hydrogenated SiN films using HF/H2 and CF4/H2 plasmas10.1021/acsaelm.3c01258 ↗
56. Selective etching of SiO2 by radical recombination through NF3/H2 pulsed RF plasma10.1021/acsaelm.4c01828 ↗
57. Pseudo-wet plasma mechanism enabling high-throughput dry etching of SiO2 by cryogenic-assisted surface reactions10.1002/smtd.202400090 ↗
58. Total and differential sputtering yields explored by SRIM simulations10.3390/coatings12101541 ↗
59. Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy10.1088/0022-3727/39/9/019 ↗
60. Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models10.1116/1.1349728 ↗
61. Effect of YF3on fluorocarbon plasma resistance of Y2O3–Al2O3–B2O3glasses10.1016/j.ceramint.2024.06.030 ↗