Signatures of bright-to-dark exciton conversion in corrugated MoS2 monolayers
Source abstract
Abstract
In this study, we investigated the effect of periodic uniaxial strains on electron and phonon transports of polycrystalline and single-crystal molybdenum disulphide (MoS2) monolayers on a periodically corrugated sapphire surface. Analysis of micro-Raman, polarized photoluminescence and second harmonic generation results shows the anisotropy of the corrugation-induced strain in both single- and polycrystalline MoS2 monolayers. AFM topography measurements show periodically-rippled surfaces of the MoS2 in the nanometre scale. Our results show that the application of the periodic strain produces two major effects on the band structure of MoS2 monolayers: modulations on the band gap anisotropy and reduction of out-of-plane spin-relaxation time due to substrate-induced bending of MoS2. Spin memory loss, in other words, shortening the spin relaxation time, enables an electron spin-flip scattering process that can convert a formerly bright exciton to a dark exciton. Such conversion is reflected in decreasing intensity of photoluminescence and in the light intensity collected by scanning near-field microscope. Our results demonstrate the ability to control both the bandgap and exciton character in monolayer MoS2 via periodic strains imposed by corrugated sapphire substrates. This approach offers an effective means in designing novel electronic devices for photovoltaic applications. The bright-to-dark excitons conversion in photovoltaic devices can boast longer lifetimes than their bright exciton counterparts so they can be more efficiently collected by external electrodes. The strain-induced conversion of the bright-to-dark excitons makes the hybrid MoS2/corrugated sapphire structure an interesting platform for future photovoltaic applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
Show source-provided references
1. Two-dimensional flexible nanoelectronics10.1038/ncomms6678 ↗
2. Graphene electronic tattoo sensors10.1021/acsnano.7b02182 ↗
3. Radiative lifetimes of excitons and trions in monolayers of the metal dichalcogenide MoS2
4. Dark exciton based strain sensing in tungsten-based transition metal dichalcogenides10.1103/PhysRevB.99.195454 ↗
5. Exciton radiative lifetime in transition metal dichalcogenide monolayers10.1103/PhysRevB.93.205423 ↗
6. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors10.1038/s41699-018-0074-2 ↗
7. A review on mechanics and mechanical properties of 2D materials—graphene and beyond10.1016/j.eml.2017.01.008 ↗
8. Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures10.1021/nl501793a ↗
9. Monolayer MoS2 heterojunction solar cells10.1021/nn502776h ↗
10. Bandgap engineering of strained monolayer and bilayer MoS210.1021/nl4014748 ↗
11. Local strain engineering in atomically thin MoS210.1021/nl402875m ↗
12. Band gap engineering with ultralarge biaxial strains in suspended monolayer MoS210.1021/acs.nanolett.6b02615 ↗
13. Strain effects on the spin-orbit-induced band structure splittings in monolayer MoS2 and graphene10.1103/PhysRevB.88.155404 ↗
14. Dark excitons and the elusive valley polarization in transition metal dichalcogenides10.1088/2053-1583/aa58a0 ↗
15. Valley excitons in two-dimensional semiconductors10.1093/nsr/nwu078 ↗
16. Measurement of the spin-forbidden dark excitons in MoS2 and MoSe2 monolayers
17. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)10.1103/PhysRevB.85.033305 ↗
18. Strain effects on monolayer MoS2 field effect transistors10.7567/JJAP.54.04DC17 ↗
19. Band gap and electronic properties of molybdenum disulphide under strain engineering: density functional theory calculations10.1080/08927022.2016.1233549 ↗
20. Strain control of exciton-phonon coupling in atomically thin semiconductors10.1021/acs.nanolett.7b04868 ↗
21. Strain gated bilayer molybdenum disulfide field effect transistor with edge contacts10.1038/srep41593 ↗
22. Piezophototronic effect in single-atomic-layer MoS2 for strain-gated flexible optoelectronics10.1002/adma.201602854 ↗
23. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics10.1038/nature13792 ↗
24. Periodic modulation of the doping level in striped MoS2 superstructures10.1021/acsnano.5b07545 ↗
25. Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS210.1103/PhysRevB.88.121301 ↗
26. Lattice strain effects on the optical properties of MoS2 nanosheets
27. Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals10.1103/PhysRevB.88.195417 ↗
28. Indirect bandgap puddles in monolayer MoS2 by substrate-induced local strain10.1002/adma.201602626 ↗
29. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide
30. Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS2 nanosheets10.1039/C7NR03537C ↗
31. Strain-engineered artificial atom as a broad-spectrum solar energy funnel10.1038/nphoton.2012.285 ↗
32. Electronic and phononic modulation of MoS2 under biaxial strain10.1016/j.physb.2017.09.059 ↗
33. Nanofacet lithography: a new bottom-up approach to nanopatterning and nanofabrication by soft replication of spontaneously faceted crystal surfaces10.1002/adma.200601625 ↗
34. Poly(ethylene oxide)-block-polystyrene thin films morphology controlled by drying conditions and substrate topography10.1016/j.eurpolymj.2015.12.020 ↗
35. Macroscopic 10-terabit–per–square-inch arrays from block copolymers with lateral order10.1126/science.1168108 ↗
36. C. Rice, R.J. Young, R. Zan, U.B. al, Raman-scattering measurements and first-principles calculations of strain-induced phononshifts in monolayer MoS2, Phys. Rev. B. 87 (n.d.) 81307.
37. Dependence of coupling of quasi 2-D MoS2 with substrates on substrate types, probed by temperature dependent Raman scattering10.1039/C3NR06462J ↗
38. First-principles Raman spectra of MoS2, WS2 and their heterostructures10.1039/c3nr06906k ↗
39. K.K.H.C.J.-U. Lee, Resonant Raman and photoluminescence spectra of suspended molybdenum disulphide, 2D Mater. 2 (n.d.) 44003.
40. Highly localized strain in a MoS2/Au heterostructure revealed by tip-enhanced Raman spectroscopy10.1021/acs.nanolett.7b02322 ↗
41. Probing nanoscale variations in strain and band structure of MoS2 on Au nanopyramids using tip-enhanced Raman spectroscopy
42. Bandgap engineering of monolayer MoS2 under strain: A DFT study10.3938/jkps.66.1789 ↗
43. Optical imaging of strain in two-dimensional crystals10.1038/s41467-018-02830-y ↗
44. Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices10.1088/2053-1583/4/1/011009 ↗
45. Enhanced spin-flip scattering by surface roughness in WS2 and MoS2 armchair nanoribbons10.1103/PhysRevB.95.165301 ↗