journal article·2025-04

Physical reservoir computing-based online learning of HfSiOx ferroelectric tunnel junction devices for image identification

Seungjun Lee, Gwangmin An, Gimun Kim, Sungjun Kim

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (66)

Show source-provided references
1. Neuromorphic computing using non-volatile memory
2. Emerging materials for neuromorphic devices and systems10.1016/j.isci.2020.101846 ↗
3. Emerging memory devices for neuromorphic computing10.1002/admt.201800589 ↗
4. Recent advances in synaptic nonvolatile memory devices and compensating architectural and algorithmic methods toward fully integrated neuromorphic chips10.1002/admt.202200884 ↗
5. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage10.1186/s11671-020-03299-9 ↗
6. Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications10.1007/s10854-019-02442-2 ↗
7. Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions10.1088/1361-6463/ad7036 ↗
8. Ferroelectric-based synapses and neurons for neuromorphic computing10.1088/2634-4386/ac4918 ↗
9. Synaptic characteristic of hafnia-based ferroelectric tunnel junction device for neuromorphic computing application10.3390/nano13010114 ↗
10. Hafnium oxide-based ferroelectric devices for in-memory computing: resistive and capacitive approaches
11. A highly CMOS compatible hafnia-based ferroelectric diode10.1038/s41467-020-15159-2 ↗
12. CMOS compatible Hf0.5Zr0.5O2 ferroelectric tunnel junctions for neuromorphic devices10.1002/aisy.201900034 ↗
13. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO210.1088/1361-6528/aac6b3 ↗
14. Ferroelectric tunnel junctions: modulations on the potential barrier10.1002/adma.201904123 ↗
15. Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory10.1063/1.5119948 ↗
16. Causes of ferroelectricity in HfO2-based thin films: an ab initio perspective10.1039/C9CP01880H ↗
17. Thermodynamic and kinetic origins of ferroelectricity in fluorite structure oxides10.1002/aelm.201800522 ↗
18. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget10.1063/1.4995619 ↗
19. Si-doped HfO2-based ferroelectric tunnel junctions with a composite energy barrier for non-volatile memory applications10.3390/ma15062251 ↗
20. Demonstration of ferroelectricity in Al-doped HfO2 With a low thermal budget of 500 °C
21. Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode10.1109/LED.2019.2944960 ↗
22. Comparison of the evolution of internal bias field of doped hafnia ferroelectric capacitors for the field-cycling reliability10.1063/5.0026136 ↗
23. Emulation of Pavlovian conditioning and pattern recognition through fully connected neural networks using Holmium oxide (Ho2O3) based synaptic RRAM device
24. Variability-controlled HfZrO2 ferroelectric tunnel junctions for reservoir computing10.1109/TED.2022.3212332 ↗
25. Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization10.1063/5.0170699 ↗
26. An artificial nociceptor based on a diffusive memristor10.1038/s41467-017-02572-3 ↗
27. A memristor-based silicon carbide for artificial nociceptor and neuromorphic computing10.1002/admt.202100373 ↗
28. Mimicking pain-perceptual sensitization and pattern recognition based on capacitance- and conductance-regulated neuroplasticity in neural network10.1021/acsami.2c20297 ↗
29. Neuromorphic skin based on emerging artificial synapses10.1002/admt.202200193 ↗
30. Investigating charge trapping in ferroelectric thin films through transient measurements10.3389/fnano.2022.939822 ↗
31. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition10.1039/C6TC02003H ↗
32. Ferroelectricity in hafnium oxide thin films10.1063/1.3634052 ↗
33. Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application10.1016/j.apsusc.2021.151566 ↗
34. Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers
35. Effects of capping electrode on ferroelectric properties of Hf0.5Zr0.5O2 thin films10.1109/LED.2018.2846570 ↗
36. Mixed Al and Si doping in ferroelectric HfO2 thin films10.1063/1.4937588 ↗
37. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement10.1039/C5NR05339K ↗
38. Post metallization annealing effect utilizing Pt gate electrode for MFSFET with ferroelectric nondoped HfO2 formed by Ar/O2-plasma sputtering10.1557/s43580-021-00065-6 ↗
39. Effect of insertion of dielectric layer on the performance of hafnia ferroelectric devices10.1109/TED.2020.3043728 ↗
40. Identification and suppression of majority surface states in the dry-etched β-Ga2O310.1021/acs.jpclett.2c02167 ↗
41. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide10.1186/s40580-023-00403-4 ↗
42. Effect of Al concentration on ferroelectric properties in HfAlO-based ferroelectric tunnel junction devices for neuroinspired applications10.1002/aisy.202370036 ↗
43. Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing10.1016/j.chaos.2020.110236 ↗
44. Impact of HfO2 dielectric layer placement in Hf0.5Zr0.5O2-based ferroelectric tunnel junctions for neuromorphic applications
45. Artificial synapses with short- and long-term memory for spiking neural networks based on renewable materials10.1021/acsnano.7b03347 ↗
46. Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses10.1038/s41427-020-00245-0 ↗
47. Optimization of conductance change in Pr1–xCaxMnO3-based synaptic devices for neuromorphic systems10.1109/LED.2015.2418342 ↗
48. Memristive architectures exploiting self-compliance multilevel implementation on 1 kb crossbar arrays for online and offline learning neuromorphic applications10.1021/acsnano.4c06942 ↗
49. Emerging optical in-memory computing sensor synapses based on low-dimensional nanomaterials for neuromorphic networks10.1002/aisy.202100236 ↗
50. Laterally coupled 2D MoS2 synaptic transistor with ion gating10.1109/LED.2020.3008728 ↗
51. Nociceptors—noxious stimulus detectors10.1016/j.neuron.2007.07.016 ↗
52. Emulating synaptic and nociceptive behavior via negative photoconductivity of a memristor10.1109/TED.2023.3276725 ↗
53. Nociceptive memristor
54. On-receptor computing with classical associative learning in semiconductor oxide memristors10.1039/D4NR02132K ↗
55. An artificial universal tactile nociceptor based on 2D polymer film memristor arrays with tunable resistance switching behaviors10.1021/acsami.4c05112 ↗
56. Towards on-receptor computing: electronic nociceptor embedded neuromorphic functionalities at nanoscale
57. Bipolar resistive switching in TiO2 artificial synapse mimicking Pavlov’s associative learning10.1021/acsami.2c17228 ↗
58. Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification10.1016/j.chaos.2021.111223 ↗
59. Reservoir computing-based design of ZnO memristor-type digital identification circuits10.3390/mi13101700 ↗
60. Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applications10.1039/D3NR01294H ↗
61. Recent advances in physical reservoir computing: a review10.1016/j.neunet.2019.03.005 ↗
62. Polyaniline-based memristive devices as key elements of robust reservoir computing for image classification10.1002/pssa.202200700 ↗
63. Molecularly reconfigurable neuroplasticity of layered artificial synapse electronics10.1002/adfm.202311994 ↗
64. Ferroelectrics with a controlled oxygen-vacancy distribution by design10.1038/s41598-019-40717-0 ↗
65. Ferroelectric field-effect transistor synaptic device with hafnium-silicate interlayer10.1109/LED.2023.3324695 ↗
66. Study of endurance performance of SiO2 interfacial layer scaling through O scavenging in Si channel n-FeFET With Si:HfO2 ferroelectric layer10.1109/TED.2024.3409204 ↗