Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications
Source abstract
Abstract
Epitaxial growth of bulk InAs1-xSbx layer on GaAs substrate could open an opportunity for cost-competitive long-wavelength infrared sensors. Achieving this requires a high-quality metamorphic InAsSb layer with a uniform strain relief buffer design. We report a comprehensive analysis of metamorphic InAsSb layers grown on InAs/GaAs virtual substrate for 0.1 eV low bandgap material with an optimized growth condition and group-V flux control. We find that InAsSb surface roughens significantly with increasing Sb composition up to 58%. Lowering the growth temperature of InAsSb layers from 450 ℃ to 425 ℃ mitigated surface roughening while allowing greater than 90% strain relaxation. Moreover, we also present a dramatically increasing threading dislocation density by more than 200 times as a consequence of high Sb composition. Finally, we demonstrate a narrow energy bandgap of 0.13 eV at 10 K in the InAs0.42Sb0.58 layer, which is close to 0.1 eV at room temperature. This InAsSb film grown on InAs/GaAs template paves the way for long-wavelength infrared optoelectronics applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Advanced Optical Sensing Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
Show source-provided references
1. HgCdTe infrared detector material: history, status and outlook10.1088/0034-4885/68/10/R01 ↗
2. InAsSb-based photodetectors
3. InAsSb-based infrared photodetectors: Thirty years later on10.3390/s20247047 ↗
4. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates10.1063/1.4871289 ↗
5. Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si10.1063/5.0032027 ↗
6. Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off10.3390/app12020820 ↗
7. Growth of InSb and InAs1− x Sb x on GaAs by molecular beam epitaxy10.1063/1.100031 ↗
8. Long-wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)10.1063/1.116784 ↗
9. 8–13 Mu-M Inassb Heterojunction Photodiode Operating at near Room-Temperature10.1063/1.114323 ↗
10. Bulk InAsSb with 0.1 eV bandgap on GaAs10.1063/1.4993454 ↗
11. Tan, K.H., et al., Growth of InAs0. 32Sb0. 68 on GaAs using a thin GaInSb buffer and strain superlattice layers. AIP Advances, 2021. 11(4): p. 045203.10.1063/5.0045483 ↗
12. Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges10.1016/j.jcrysgro.2019.01.044 ↗
13. Dislocations in strained-layer epitaxy: theory, experiment, and applications10.1016/0920-2307(91)90006-9 ↗
14. Ultra-high-throughput production of III-V/Si wafer for electronic and photonic applications10.1038/srep20610 ↗
15. Fabrication of high-quality GaAs-based photodetector arrays on Si10.1063/1.4980122 ↗
16. High-Performance Flexible InAs Thin-Film Photodetector Arrays with Heteroepitaxial Growth Using an Abruptly Graded InxAl1-xAs Buffer10.1021/acsami.1c14687 ↗
17. Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (001)10.1016/j.jcrysgro.2006.11.298 ↗
18. Jayavel, P., et al., Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001). Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 8, 2006. 3(8): p. 2685-+.10.1002/pssc.200669517 ↗
19. InAs1-ySby virtual substrates grown by MOCVD for long wave infrared detectors10.1016/j.jcrysgro.2020.125552 ↗
20. Crosshatched Surface-Morphology in Strained Iii-V Semiconductor-Films10.1063/1.344968 ↗
21. Observations of Roughening on In0.1ga0.9as/Gaas Surfaces by Atomic Force Microscopy10.1088/0268-1242/8/4/005 ↗
22. On the Nature of Cross-Hatch Patterns on Compositionally Graded Si1-Xgex Alloy Layers10.1063/1.111287 ↗
23. Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP10.1063/1.5054574 ↗
24. The Effect of Growth Temperature on Plastic Relaxation of In0.2ga0.8as Surface-Layers on Gaas10.1016/0022-0248(92)90341-F ↗
25. Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures10.1063/1.364345 ↗
26. On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch10.1016/j.apsusc.2019.02.154 ↗
27. Transmission Electron-Microscopy and Transmission Electron-Diffraction Structural Studies of Heteroepitaxial Inasysb1-Y Molecular-Beam Epitaxial Layers10.1063/1.353440 ↗
28. Sb surface segregation effect on the phase separation of MBE grown InAsSb10.1016/S0022-0248(01)02375-2 ↗
29. Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers10.1016/S0022-0248(98)01415-8 ↗
30. A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy10.1016/j.jcrysgro.2012.12.144 ↗
31. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy10.1063/1.4816660 ↗
32. Growth and characterization of highly tensile strained Ge1-xSnx formed on relaxed InyGa1-yP buffer layers10.1063/1.4944718 ↗
33. A new approach for determining epilayer strain relaxation and composition through high resolution X-ray diffraction
34. Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers10.1063/1.3650473 ↗
35. Defect selective etching of GaAsyP1-y photovoltaic materials10.1016/j.jcrysgro.2014.07.005 ↗
36. Misfit Stress Dependence of Dislocation Density Reduction in Gaas Films on Si Substrates Grown by Strained-Layer Superlattices10.1063/1.101052 ↗
37. Flexible p-i-n InAs thin-film photodetector with low dark current enabled by an InAlAs barrier10.1364/OME.457345 ↗
38. Low threading dislocation density GaAs growth on on-axis GaP/Si (001)10.1063/1.5001360 ↗
39. Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications