journal article·2022-09

Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs

Guanjie Li, Xiaomin Li, Xinke Liu, Anran Gao, Junliang Zhao, Fawang Yan, Qiuxiang Zhu

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OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials

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