Phase evolution of Te-hyperdoped Si upon furnace annealing
Source abstract
Abstract
Abstract Si hyperdoped with chalcogens via ion implantation and pulsed laser melting is known to exhibit strong room-temperature sub-bandgap photoresponse. As a thermodynamically metastable system, an impairment of the optoelectronic properties in hyperdoped Si materials occurs upon subsequent high-temperature thermal treatment (>500 °C). The substitutional Te atoms that cause the sub-bandgap absorption are removed from the Si matrix to form Te-related complexes, which are electrically and optically inactive. In this work, we explore the formation of defects in Te-hyperdoped Si layers which leads to the electrical deactivation upon furnace annealing through the analysis of optical and microstructural properties as well as positron annihilation lifetime spectroscopy. Particularly, Te-rich clusters are observed in samples thermally annealed at temperature reaching 950 °C and above. Combined with polarized Raman analysis and transmission electron microscopy, the observed crystalline clusters are suggested to be Si2Te3.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Phase-change materials and chalcogenides · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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