Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices
Source abstract
Abstract
Abstract Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Random lasers and scattering media · Plasmonic and Surface Plasmon Research · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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