Effect of photocatalytic oxidation technology on GaN CMP
Source abstract
Abstract
Abstract GaN is so hard and so chemically inert that it is difficult to obtain a high material removal rate (MRR) in the chemical mechanical polishing (CMP) process. This paper discusses the application of photocatalytic oxidation technology in GaN planarization. Three N-type semiconductor particles (TiO 2 , SnO 2 , and Fe 2 O 3 ) are used as catalysts and added to the H 2 O 2 –SiO 2 -based slurry. By optical excitation, highly reactive photoinduced holes are produced on the surface of the particles, which can oxidize OH − and H 2 O absorbed on the surface of the catalysts; therefore, more OH* will be generated. As a result, GaN MRRs in an H 2 O 2 –SiO 2 -based polishing system combined with catalysts are improved significantly, especially when using TiO 2 , the MRR of which is 122 nm/h. The X-ray photoelectron spectroscopy (XPS) analysis shows the variation trend of chemical composition on the GaN surface after polishing, revealing the planarization process. Besides, the effect of pH on photocatalytic oxidation combined with TiO 2 is analyzed deeply. Furthermore, the physical model of GaN CMP combined with photocatalytic oxidation technology is proposed to describe the removal mechanism of GaN.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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