Ultrafast broadband photodetector based on SnS synthesized by hydrothermal method

Abstract As one of the few two dimensional intrinsic p-type semiconductor materials, tin (II) sulfide (SnS) has gradually emerged in the field of layered metal chalcogenides (LMCs) and has attracted enormous attention due to its superior properties, such as high absorption and low power consumption. In this work, SnS is obtained by a simple, effective and low-cost hydrothermal synthesis route. The morphology, phase structure and chemical composition of the obtained SnS are characterized. The results show that the as-synthesized SnS has a belt-like structure with high purity and crystallinity. The belt length and width are ~15 μm and ~5 μm, respectively. Photodetectors based on such SnS are fabricated, and the photoresponse characteristics are also explored. The photodetectors show excellent and ultrafast photoresponse performance in a broad spectral range in the visible and near-infrared regions. The rise and decay time under illumination at the near-infrared wavelength of 850 nm laser are short as 1.1 ms and 1.3 ms, respectively. The ultrafast photoresponse performance makes SnS a promising candidate for Vis-NIR photodetectors.