Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure
Source abstract
Abstract
For the first time, an ultrahigh degree of optical polarization (DOP) of 81.8% in AlGaN-based deep ultraviolet LED (DUV-LED) operated at 286 nm has been experimentally demonstrated. The very high DOP was obtained by introducing the novel moth-eye microstructure fabricated on the backside of a sapphire substrate. Compared with conventional DUV-LED with a DOP of 64.7%, a significant 1.26-fold enhancement was obtained. It was worth mentioning that the DOP was accurately measured via self-built full spatial transverse electric (TE) and transverse magnetic (TM) mode light intensity test system, which was mainly composed of angle resolution bracket, Glan-Taylor prism, and spectrometer. For both TE and TM mode light, the extraction angle inside the semiconductor was extended from conventional (−26°, 26°), (−52°, −41°), (41°, 52°) to (−52°, 52°). Combined with finite difference time domain simulation, it was further confirmed that the novel moth-eye microstructure could notably weaken the total internal reflection at the sapphire/air interface and enlarge the light extraction angle. As a result, compared with the conventional one, DUV-LED with a moth-eye microstructure approximately doubled the light extraction efficiency.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, China
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Wuhan National Laboratory for Optoelectronics · Key Laboratory of Infrared Imaging Material and Detectors
References (32)
Show source-provided references
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