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ACS PHOTONICS

AMER CHEMICAL SOC

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6,121 papers
Nanowire Quantum Dot Emitters Evanescently Coupled On-Chip via Curved and Segmented SiN Waveguides

Edith Yeung, Kataryna Sorensen, David B. Northeast, Maziyar Milanizadeh et al.

This work implements a hybrid device based on a semiconductor quantum dot embedded within a nanowire to bridge a noncontinuous curved waveguide structure. The geometry takes advantage of evanescent coupling between the photonic structures to recover single photons emitted from both outputs of the device. Auto- and cross-correlation measurements were performed on different outpu…

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Optical Spin Defect Pairs in Cubic Boron Nitride

Josiah E. Hsi, Islay O. Robertson, Abhijit Biswas, Jishnu Murukeshan et al.

Room-temperature optically active solid-state spin defects are widely known to be useful in quantum sensing applications, however, only a select range of materials have been found to host such systems. Recent measurements in the van der Waals material hexagonal boron nitride (hBN) have shown optically detected magnetic resonance (ODMR) with spin-1/2-like signatures can be expla…

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Limits of Stable Near-Field Probing in Nanophotonic Traps

Johannes Piotrowski, Constanze Bach, Nicolás Vera Paz, Philipp Schneeweiss et al.

Near-fields around nanophotonic structures and waveguides can be used to optically interface particles ranging from atoms and molecules to microscopic biological and synthetic particles. Due to the strong, non-linear dependence of the near-field coupling strength on the particles' position, a change of the spread of the particles' position will change their mean coupling streng…

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Photonic Theta Cavity: Engineering Bound States in the Continuum in Topological Resonators beyond the Limitations of Near-Field Coupling

Eric Seabron, Robert E. Coleman, Chuanyu Lian, Malcolm Bogroff et al.

The Theta Cavity is a unique topological resonator architecture which utilizes interferometric coupling to overcome fundamental design limitations associated with near-field evanescent coupling which currently dominates the design space for integrated photonics. The defining device physics is established by the mirror symmetric cross junctions which preserves efficient power tr…

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Ultrawide-Bandgap CsAgCl 2 Layered Single Crystals for Bifunctional Solar-Blind UV Polarimetry and X-ray Detection

Yuqi Zhou, Yalin Zhai, Tao He, Peng Wan et al.

The monolithic integration of solar-blind ultraviolet polarization sensitivity and high-energy X-ray detection into a single semiconductor platform is urgently demanded for next-generation multimodal smart sensing, yet remains unattainable with mainstream ultrawide bandgap materials (e.g., Ga 2 O 3, hBN, diamond, and others) due to their inherent trade-offs among bandgap, stopp…

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High-Efficiency, Broadband, and Polarization-Diversity Multicore Fiber-Chip Interfaces for Optical I/O

Xianyi Feng, Wu Zhou, Hao Chen, Wenzhang Tian et al.

Driven by the substantial data transfer demands of artificial intelligence clusters and high-performance computing, moving optics into on-board and in-package interconnects is emerging as a long-term solution. Although specialized optical fibers, such as multicore fibers (MCFs), have the potential to enable ultradense I/O interfaces and decrease fiber cable counts, the random d…

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Emission Defects Induced by Focused Ga Ion Implantation under High-Dose Window in Silicon Carbide

Luqing Shao, Wei Yan, Min Qiu

Focused ion beam (FIB) implantation provides a versatile method for engineering defects. In this work, we report a previously unobserved defect-related zero-phonon line (ZPL)─termed ZPL Spot ─induced by high-dose focused gallium (Ga) ion implantation (30 kV, 600 pA) into a 4H-SiC substrate. Under cryogenic conditions (1.6 K), the ZPL Spot emission is centered around 750 nm with…

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Coupling Nitrogen Vacancy Centers in Silicon Carbide to Nanophotonic Resonators

Ivan Zhigulin, Konosuke Shimazaki, Samuel M. Stephens, Angus Gale et al.

Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centers including the nitrogen vacancy defect that has a spin-triplet ground state. However, strong phonon coupling in the infrared range limits photon extraction from these defects. …

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ACS Photonics·2026Open access
Toward Polarization Routing of Magnetic and Electric Dipolar Emission with Dielectric Metasurfaces

Marijn Rikers, Ayesheh Bashiri, Katsuya Tanaka, Ángela Barreda et al.

High Resolution Image Download MS PowerPoint Slide We investigate the polarization properties of emission associated with the magnetic dipole and electric dipole transitions of europium(III) coupled to an anisotropic dielectric metasurface with polarization-engineered electric and magnetic photonic local density of states. The metasurface consists of a square array of Mie-reson…

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Reconfigurable Generation of Vector Beam Lattices in a Coherent Fiber Laser Array

Wanru Zhang, Kaikai Jin, Rongtao Su, Siyu Chen et al.

Vector beam (VB) lattices have attracted considerable interest for applications in laser processing, optical communications, and optical trapping. However, the reconfigurable generation of high-power VB lattices remains a challenge. Here, we propose and demonstrate the generation of cylindrical vector beam (CVB) lattices and hybrid vector beam (HVB) lattices using a coherent fi…

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