Investigation on α-particle-induced single event effects in AlGaN/GaN HEMTs: Bias, strike location, and trap effects

This study first detailed simulation-based α-particle-induced effects in AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs), with a specific focus on the correlation between gate/drain transient currents and trap behaviors. We quantitatively analyzed single-event effects (SEE) responses under varying gate/drain biases, ion strike locations, and trap types/densities to investigate the device’s SEE sensitivity and charge collection mechanisms. The results show that radiation sensitivity depends heavily on these conditions, with the device being particularly vulnerable in the OFF-state. In particular, drain transient current was most sensitive to strikes at the gate–drain edge, while gate current peaked at the gate center. To mitigate these effects, field-plate architecture was introduced to effectively redistribute peak electric fields, thereby providing a robust design guideline for improving the radiation tolerance of GaN HEMTs. Crucially, acceptor traps at the AlGaN/GaN interface were identified as the governing factor. Trapped electrons distort the local electric field, inducing band bending and activating the gate leakage mechanism. These results provide a comprehensive analysis of alpha particle-induced effects in AlGaN/GaN HEMTs, focusing on gate leakage and trap dynamics, addressing a gap in prior research. These results offer essential insights and establish a theoretical foundation for radiation-hardened device design.