Back-barrier-induced fast transient trapping and threshold voltage instability in AlGaN/AlN/GaN HEMTs
Source abstract
Abstract
Fast transient charge trapping in AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) was investigated using fast pulsed measurements. Two devices—with and without an Al0.08Ga0.92N back-barrier—were compared to evaluate the threshold voltage (Vt) instability under single-pulse stress from 1 ms to 1 s. The back-barrier device exhibited a slightly larger short-term Vt shift (<1 s) due to enhanced shallow-trap activation, while deep-trap charging was effectively suppressed, resulting in improved long-term stability. These results demonstrate that the AlGaN back-barrier enhances electron confinement and provides a physical pathway to mitigate long-term reliability degradation, clarifying the trade-off between fast transient trapping and deep-trap suppression in GaN HEMTs.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Lubbock High School 1 , 2004 19th Street, Lubbock, Texas 74901,
Department of Electrical and Computer Engineering, Texas Tech University 2 , 1012 Boston Ave, Lubbock, Texas 79409,
School of Electronic and Electrical Engineering, Hankyong National University 3 , 327 Jungang-ro, Anseong-si, Gyeonggi-do,
References (12)
Show source-provided references
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