Quantum limits of ballistic electrical and thermal resistances of semiconductors
Source abstract
Abstract
The importance of electrical contact resistance and thermal boundary resistance has increased dramatically as devices are scaled to atomic limits. The use of a rich range of materials with various bandstructures (e.g., parabolic and conical) and in geometries exploiting various dimensionalities (e.g., 1D wires, 2D sheets, and 3D bulk) will increase in the future. Here, we derive a single general expression for the quantum limit of electrical contact resistivity for various bandstructures and all dimensions. A corresponding result for the quantum limit of thermal boundary resistance is also derived. These results will be useful to quantitatively co-design, benchmark, and guide the lowering of electrical and thermal boundary resistances for energy efficient devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Thermal properties of materials · 2D Materials and Applications · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,
Department of Electrical and Computer Engineering, University of Texas at Austin 2 , Austin, Texas 78712,
Department of Materials Science and Engineering, Cornell University 3 , Ithaca, New York 14853,
Kavli Institute at Cornell for Nanoscale Science, Cornell University 4 , Ithaca, New York 14853,
Funding
National Science Foundation (NSF) Future of Semiconductors · Samsung · Semiconductor Research Corporation (SRC) and DARPA
References (19)
Show source-provided references
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