Uniaxial strain engineering in monolayer SnO double-gate FETs: First-principles calculations

To gain deeper insights into the impact of strain engineering on monolayer (ML) p-type oxide semiconductor Tin monoxide (SnO) and its device performance, we conducted a comprehensive investigation using first-principles calculations. Uniaxial strain was applied to ML SnO to enhance the on-state current (Ion) in devices. First, we analyzed the strain-induced modifications in the band structure, Bloch states, and effective mass of SnO, highlighting the potential for improved hole mobility. Subsequently, double-gate field-effect transistors (DG FETs) with channel lengths (LCh) ranging from 1 to 5 nm were simulated to evaluate the impact of strain on device characteristics. The results demonstrate that applying strain to ML SnO effectively increases Ion and reduces the subthreshold swing, establishing strain engineering as a promising strategy for enhancing the performance of ML SnO-based DG FETs.