Behavioral model of a semiconductor opening switch (SOS)
Source abstract
Abstract
This paper presents a comprehensive experimental investigation and SPICE-based behavioral model of semiconductor opening switch devices developed using a MOSFET-driven testbed. Measurements of key device parameters, including peak diode current, output voltage, risetime, pulsewidth, and voltage multiplication factor, reveal the dependence of device performance on forward charge levels. These observations form the basis for an empirically derived, piecewise resistance function that captures both the gradual onset and abrupt non-linear increase in resistance during switching. Comparisons between the simulated and experimental waveforms demonstrate the model’s ability to be used as a “drop-in” SPICE component.
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Research context
OpenAlex topics: Pulsed Power Technology Applications · Physical Unclonable Functions (PUFs) and Hardware Security · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Pulsed Power and Power Electronics, Texas Tech University 1 , Lubbock, Texas 79409,
Air Force Research Laboratory, Kirtland Air Force Base 2 , Albuquerque, New Mexico 87108,
References (20)
Show source-provided references
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