Different substrate structures affect the substitution efficiency of Al atoms in AlxGa1−xN epitaxial films
Source abstract
Abstract
Through XRD analysis and xrayutilities fitting, this paper investigates the structural parameters of AlxGa1−xN(AlGaN) epitaxial layers grown on both free-standing GaN (FS-GaN) substrates and GaN templates (4.5 um GaN on Sapphire), including thickness and Al composition. These parameters determine the conductivity performance of GaN high electron mobility transistor devices. Under the same growth conditions, the Al composition in the AlGaN epitaxial layer grown on FS-GaN substrates is lower, but the thickness (growth rate) is higher, indicating a relatively weaker efficiency of Al substitution for Ga. This trend remains within a large range of trimethylgallium input ratios of 20%–40%. By analyzing and demonstrating the various differences between the two substrates, it can be concluded that the misorientation angle and threading dislocation density of the GaN layer have a high correlation with the efficiency of Al substitution, while the stress of the GaN layer and the temperature of the substrate surface show no significant correlation.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronics and Information Technology, Sun Yat-Sen University 1 , Guangzhou 510275, People’s Republic of China
Dongguan Sino Nitride Semiconductor Co., Ltd. 2 , Dongguan 523270, People’s Republic of China
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University 3 , Guangzhou 510275, People’s Republic of China
Funding
Special Project for Research and Development in Key Areas of Guangdong Province · National Key Research and Development Program
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