journal article·2023-01-01Open access

Structures and properties of nano-XNH2 (X = C, Si, Ge, and Sn)

Shengqian Ma, Jingfang Tan, Xiaomei Wu

AIP Advances· Volume 13· Issue 1

Abstract

The structures and properties of nano-XNH2 (X = C, Si, Ge, and Sn) are explored using Density Functional Theory (DFT). Elastic strain and width are introduced to investigate the nano-XNH2 nanosheets and nanoribbons. First, their structural parameters and lattice constants are investigated by using quadratic curve fitting methods. Second, the regulation of bandgap with the change in the elastic strain and width is investigated. The theoretical calculations show that the bandgaps of these materials can be easily modulated. Therefore, nano-XNH2 has great potential applications in stress sensors and electronic and optoelectronic devices.
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Research context

OpenAlex topics: MXene and MAX Phase Materials · Boron and Carbon Nanomaterials Research · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Electronic Engineering, Taishan University 1 , Taian 271000, Shandong, People’s Republic of China

Department of Chemical Physics, University of Science and Technology of China 2 , Hefei 230026, Anhui, People’s Republic of China

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