journal article·2020-02-01Open access

Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)]

Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla

AIP Advances· Volume 10· Issue 2

Abstract

Art. 029902, 1 S.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies

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Affiliations

Fraunhofer Institute for Applied Solid State Physics , Tullastrasse 72, 79108 Freiburg, Germany

References

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