Transient pulse analysis of ionized electronics exposed to γ-radiation generated from a relativistic electron beam

When a semiconductor element is irradiated with radiation in the form of a transient pulse emitted from a nuclear explosion, a large amount of charge is generated in a short time in the device. A photocurrent amplified in a certain direction by these types of charges cause the device to break down and malfunction or in extreme cases causes them to burn out. In this study, a pulse-type γ-ray generator based on a relativistic electron beam accelerator (γ=2.2, β=0.89) which functions by means of tungsten impingement was constructed and tested in an effort to investigate the process and effects of the photocurrent formed by electron hole pairs (EHP) generated in a pMOSFET device when a transient radiation pulse is incident in the device. The pulse-type γ-ray irradiating device used here to generate the electron beam current in a short time was devised to allow an increase in the irradiation dose. A precise signal processing circuit was constructed to measure the photocurrent of the small signal generated by the pMOSFET due to the electron beam accelerator pulse signal from the large noise stemming from the electromagnetic field around the relativistic electron beam accelerator. The pulse-type γ-ray generator was installed to meet the requirements of relativistic electron beam accelerators, and beam irradiation was conducted after a beam commissioning step.