Optimization design of electrode structure of GaAs photoconductive semiconductor switch
Source abstract
Abstract
Previous studies revealed that changing the electrode structures of a gallium arsenide photoconductive semiconductor switch (GaAs PCSS) can significantly affect the local electric field and current density at the electrodes. Knowing the optimization of the electrode structures of GaAs PCSS can improve the withstand voltage performance and current carrying capability. In this work, we optimize the surface contact electrode structure of GaAs PCSS, and numerical simulations are performed to systematically study the electric field and current density distribution in the bulk of the device. The result shows that the maximum transverse current density and maximum longitudinal current density of the embedded 172° isosceles trapezoid electrode structure are smaller than other kinds of electrode structures, which is the most favorable for improving the withstand voltage and current carrying capability of GaAs PCSS.
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Research context
OpenAlex topics: Pulsed Power Technology Applications · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
The Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shananxi, Xi’an University of Technology 1 , Xi’an 710048, China
School of Electronics and Information Engineering, Ankang University 2 , Ankang 725000, China
School of Information Engineering, Shananxi Xueqian Normal University 3 , Xi’an 710061, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Ankang Science and Technology Program Project · Ankang University School Level Project
References (23)
Show source-provided references
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